參數(shù)資料
型號(hào)： M13S256328A
廠商： Elite Semiconductor Memory Technology Inc.
英文描述： 2M x 32 Bit x 4 Banks Double Data Rate SDRAM
中文描述： 200萬(wàn)× 32位× 4個(gè)銀行雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù)： 5/47頁(yè)
文件大?。?/td> 807K
代理商： M13S256328A
ES MT
M13S256328A
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 1.2 5/47
DC Specifications
Version
Unit
Note
Parameter
Symbol
Test Condition
-5
-
-
Operation Current
(One Bank Active)
IDD0
t
RC
= t
RC
(min) t
CK
= t
CK
(min)
Active – Precharge
Burst Length = 2 t
RC
= t
RC
(min),
CL= 2.5 I
OUT
= 0mA,
Active-Read- Precharge
190
mA
-
Operation Current
(One Bank Active)
IDD1
230
mA
-
Precharge Power-down
Standby Current
IDD2P
CKE
≤
V
IL
(max), t
CK
= t
CK
(min),
All banks idle
40
mA
-
Idle Standby Current
IDD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= t
CK
(min)
150
mA
-
Active Power-down Standby
Current
IDD3P
All banks ACT, CKE
≤
V
IL
(max),
t
CK
= t
CK
(min)
50
mA
-
Active Standby Current
IDD3N
One bank; Active-Precharge, t
RC
= t
RAS
(max),
t
CK
= t
CK
(min)
180
mA
-
Operation Current (Read)
IDD4R
Burst Length = 2, CL= 2.5 , t
CK
=
t
CK
(min), I
OUT
= 0Ma
495
mA
-
Operation Current (Write)
IDD4W
Burst Length = 2, CL= 2.5 , t
CK
=
t
CK
(min)
450
mA
-
Auto Refresh Current
IDD5
t
RC
≥
t
RFC
(min)
350
mA
-
Self Refresh Current
IDD6
CKE
≤
0.2V
8
mA
1
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
V
IH
(AC)
V
REF
+ 0.35
-
V
-
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
V
IL
(AC)
-
V
REF
- 0.35
V
-
Input Different Voltage, CLK and CLK inputs
V
ID
(AC)
0.7
V
DDQ
+0.6
V
1
Input Crossing Point Voltage, CLK and CLK inputs
V
IX
(AC)
0.5*V
DDQ
-0.2
0.5*V
DDQ
+0.2
V
2
Note1. V
ID
is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of
the same.
Input / Output Capacitance
(V
DD
= 2.3V~2.7V, V
DDQ
=2.3V~2.7V, T
A
= 25° , f = 1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance(A0~A11, BA0~BA1, CKE,
CS
,
RAS
,
CAS
,
WE
)
C
IN1
1
4
pF
Input capacitance (CLK, CLK )
C
IN2
1
5
pF
Data & DQS input/output capacitance
C
OUT
1
6.5
pF
Input capacitance (DM)
C
IN3
1
6.5
pF
相關(guān)PDF資料
PDF描述
M13S32321A 256K x 32 Bit x 4 Banks Double Data Rate SDRAM
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M13S64164A 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5BG 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M13S256328A-5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256K x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256K x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A-5L 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256K x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A-6L 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256K x 32 Bit x 4 Banks Double Data Rate SDRAM
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