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參數(shù)資料
| 型號： | M12L64322A-7BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 |
| 封裝： | 8 X 13 MM, LEAD FREE, BGA-90 |
| 文件頁數(shù)： | 47/47頁 |
| 文件大?。?/td> | 791K |
| 代理商： | M12L64322A-7BG |
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ES MT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision
:
2.3
47/47
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form or by any
means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at the time of
publication. ESMT assumes no responsibility for any error in this document, and
reserves the right to change the products or specification in this document without
notice.
The information contained herein is presented only as a guide or examples for the
application of our products. No responsibility is assumed by ESMT for any
infringement of patents, copyrights, or other intellectual property rights of third
parties which may result from its use. No license, either express , implied or
otherwise, is granted under any patents, copyrights or other intellectual property
rights of ESMT or others.
Any semiconductor devices may have inherently a certain rate of failure. To minimize
risks associated with customer's application, adequate design and operating
safeguards against injury, damage, or loss from such failure, should be provided by
the customer when making application designs.
ESMT's products are not authorized for use in critical applications such as, but not
limited to, life support devices or system, where failure or abnormal operation may
directly affect human lives or cause physical injury or property damage. If products
described here are to be used for such kinds of application, purchaser must do its
own quality assurance testing appropriate to such applications.
相關(guān)PDF資料 |
PDF描述 |
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| M12L64322A-7TG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S128168A | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-10TG | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S16161A-7BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-7TG | 512K x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L64322A-7BG2U | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks |
| M12L64322A-7T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-7TG2U | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks |
| M-12-LID-PLATED | 功能描述:罩類、盒類及殼類產(chǎn)品 PLTD LID FOR M12 RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級: 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red |
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