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| 型號(hào)： | M12L64322A-7BG |
| 廠(chǎng)商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 |
| 封裝： | 8 X 13 MM, LEAD FREE, BGA-90 |
| 文件頁(yè)數(shù)： | 10/47頁(yè) |
| 文件大?。?/td> | 791K |
| 代理商： | M12L64322A-7BG |
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ES MT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision
:
2.3
10/47
SIMPLIFIED TRUTH TABLE
COMMAND
CKEn-1
CKEn
CS RAS
CAS
WE
DQM BA0,1 A10/AP
A9~A0
Note
Register
Mode Register set
H
X
L
L
L
L
X
OP CODE
1,2
Auto Refresh
H
3
Entry
H
L
L
L
L
H
X
X
3
L
H
H
H
X
3
Refresh
Self
Refresh
Exit
L
H
H
X
X
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
X
V
Row Address
Auto Precharge Disable
L
4
Read &
Column Address
Auto Precharge Enable
H
X
L
H
L
H
X
V
H
Column
Address
(A0~A7)
4,5
Auto Precharge Disable
L
4
Write &
Column Address
Auto Precharge Enable
H
X
L
H
L
L
X
V
H
Column
Address
(A0~A7)
4,5
Burst Stop
H
X
L
H
H
L
X
X
6
Bank Selection
V
L
Precharge
All Banks
H
X
L
L
H
L
X
X
H
X
H
X
X
X
Entry
H
L
L
V
V
V
X
Clock Suspend or
Active Power Down
Exit
L
H
X
X
X
X
X
X
H
X
X
X
Entry
H
L
L
H
H
H
X
H
X
X
X
Precharge Power Down Mode
Exit
L
H
L
V
V
V
X
X
DQM
H
X
V
X
7
H
X
X
X
No Operating Command
H
X
L
H
H
H
X
X
(V = Valid , X = Don’t Care. H = Logic High , L = Logic Low )
Note : 1.OP Code : Operating Code
A0~A10 & BA0~BA1 : Program keys. (@ MRS)
2.MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3.Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge of command is meant by “Auto”.
Auto/self refresh can be issued only at all banks precharge state.
4.BA0~BA1 : Bank select addresses.
If both BA1 and BA0 are “Low” at read ,write , row active and precharge ,bank A is selected.
If both BA1 is “Low” and BA0 is “High” at read ,write , row active and precharge ,bank B is selected.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L64322A-7BG2U | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks |
| M12L64322A-7T | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-7TG | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12L64322A-7TG2U | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks |
| M-12-LID-PLATED | 功能描述:罩類(lèi)、盒類(lèi)及殼類(lèi)產(chǎn)品 PLTD LID FOR M12 RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級(jí): 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red |
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