參數(shù)資料
型號(hào)： M12L32162A-7TG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 1M x 16Bit x 2Banks Synchronous DRAM
中文描述： 2M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, LEAD FREE, TSOP2-54
文件頁(yè)數(shù)： 8/29頁(yè)
文件大?。?/td> 719K
代理商： M12L32162A-7TG
ES MT
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Preliminary
M12L32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
0.3
8/29
Address
BA
A11~A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
RFU
RFU
W.B.L
TM
CAS Latency
BT
Burst Length
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT = 0
BT = 1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
Reserved
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
0
1
0
4
4
1
1
Reserved
0
1
1
3
0
1
1
8
8
Write Burst Length
1
0
0
Reserved
1
0
0
Reserved Reserved
A9
Length
1
0
1
Reserved
1
0
1
Reserved Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
Full Page Reserved
POWER UP SEQUENCE
1.Apply power and start clock, Attempt to maintain CKE = ”H”, DQM = ”H” and the other pin are NOP condition at the inputs.
2. Maintain stable power , stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue mode register set command to initialize the mode register.
cf.) Sequence of 4 & 5 is regardless of the order.
The device is now ready for normal operation.
Full Page Length : 256
Note : 1. RFU(Reserved for future use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.
3. The full column burst (256 bit) is available only at sequential mode of burst type.
相關(guān)PDF資料
PDF描述
M12L64164A-5BG 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6BG 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-7BG 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64322A-5BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-5TG 512K x 32 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L32162A-7TVG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M12L32321A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-5.5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-7BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
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