參數(shù)資料
型號(hào)： M12L2561616A-6TG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi)： DRAM
英文描述： 4M x 16 Bit x 4 Banks Synchronous DRAM
中文描述： 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： 0.400 INCH, LEAD FREE, TSOP2-54
文件頁(yè)數(shù)： 14/44頁(yè)
文件大?。?/td> 908K
代理商： M12L2561616A-6TG
ES MT
Write command
(CS ,CAS ,
WE
= Low, RAS = High)
If the mode register is in the burst write mode, this command sets the burst start
address given by the column address to begin the burst write operation. The first
write data in burst can be input with this command with subsequent data on following
clocks.
Read command
(CS ,CAS = Low, RAS ,
WE
= High)
Read data is available afterCAS latency requirements have been met.
This command sets the burst start address given by the column address.
CBR (auto) refresh command
(CS ,RAS ,CAS = Low,
WE
, CKE = High)
This command is a request to begin the CBR refresh operation. The refresh
address is generated internally.
Before executing CBR refresh, all banks must be precharged.
After this cycle, all banks will be in the idle (precharged) state and ready for a
row activate command.
During t
RC
period (from refresh command to refresh or activate command), the
M12L2561616A cannot accept any other command.
M12L2561616A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
Publication Date
:
Aug. 2007
14/44
CLK
CLK
CKE
CKE
CS
CS
RAS
RAS
WE
WE
BA0,BA1
(Bank select)
BA0,BA1
(Bank select)
A10
A10
Add
Add
CAS
CAS
H
H
Col.
Fig. 4 Column address and
write command
Fig. 5 Column address and
read command
CLK
CKE
CS
RAS
WE
BA0,BA1
(Bank select)
A10
Add
CAS
H
Fig. 6 Auto refresh command
Col.
相關(guān)PDF資料
PDF描述
M12L2561616A-7BG 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7TG 4M x 16 Bit x 4 Banks Synchronous DRAM
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M12L32162A-7BG 1M x 16Bit x 2Banks Synchronous DRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L2561616A-6TG2K 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
M12L2561616A-6TIG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7BG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-7BG2K 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:JEDEC standard 3.3V power supply
M12L2561616A-7BIG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Synchronous DRAM
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