參數(shù)資料
型號: M12L128168A-7TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, LEAD FREE, TSOP2-54
文件頁數(shù): 39/43頁
文件大?。?/td> 804K
代理商: M12L128168A-7TG
ESMT
M12L128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
2.0
Publication Date
:
Oct. 2006
39/43
Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4
*Note: 1. Both banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + t
SS
prior to Row active command.
3. Can not violate minimum refresh specification.
C L O C K
C K E
C S
R A S
C A S
A D D R
W E
DQ
DQ M
A10/AP
A12
A c t i v e
P o w er - do w n
E xi t
P r e c h a r g e
: D o n ' t c a r e
*Not e 3
*Not e 2
*Not e 1
t
S S
t
S S
t
S S
Ra
Ra
Qa0
Qa1
Qa2
t
S H Z
Precharge
Power-Down
Entry
Precharge
Power-Down
Exit
Row Active
Active
Power-down
Entry
Read
0 1 2 3 4 5 6 7 8 9
10 11 12 13 14 15 16 17 18 19
Ca
A13
相關(guān)PDF資料
PDF描述
M12L128324A-7BG 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-7TG 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-6BG 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-6TG 1M x 32 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L128168A-7TG2L 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:ABSOLUTE MAXIMUM RATINGS
M12L128168A-7TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128324A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A_09 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM