- 您現在的位置：買賣IC網 > PDF目錄377800 > M12L128168A-7TG (ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC) 2M x 16 Bit x 4 Banks Synchronous DRAM PDF資料下載
參數資料
| 型號： | M12L128168A-7TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 INCH, LEAD FREE, TSOP2-54 |
| 文件頁數： | 24/43頁 |
| 文件大?。?/td> | 804K |
| 代理商： | M12L128168A-7TG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當前第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁
ESMT
FUNCTION TURTH TABLE (TABLE 1)
M12L128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
2.0
Publication Date
:
Oct. 2006
24/43
Current
State
IDLE
Row
Active
Read
Write
Read with
Auto
Precharge
Write with
Auto
Precharge
CS
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
RAS CAS
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
L
L
X
H
H
H
L
L
WE
BA
ADDR
ACTION
Note
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
H
L
X
H
H
L
H
L
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
X
BA
BA
BA
X
X
X
X
NOP
NOP
ILLEGAL
2
2
4
5
5
2
2
3
2
3
3
2
3
2
2
CA, A10/AP ILLEGAL
RA
A10/AP
X
OP code
X
X
X
CA, A10/AP Begin Read ; latch CA ; determine AP
CA, A10/AP Begin Write ; latch CA ; determine AP
RA
ILLEGAL
A10/AP
Precharge
X
ILLEGAL
X
NOP (Continue Burst to End
Row Active)
X
NOP (Continue Burst to End
Row Active)
X
Term burst
Row active
CA, A10/AP Term burst, New Read, Determine AP
CA, A10/AP Term burst, New Write, Determine AP
RA
ILLEGAL
A10/AP
Term burst, Precharge timing for Reads
X
ILLEGAL
X
NOP (Continue Burst to End
Row Active)
X
NOP (Continue Burst to End
Row Active)
X
Term burst
Row active
CA, A10/AP Term burst, New Read, Determine AP
CA, A10/AP Term burst, New Write, Determine AP
RA
ILLEGAL
A10/AP
Term burst, Precharge timing for Writes
X
ILLEGAL
X
NOP (Continue Burst to End
Row Active)
X
NOP (Continue Burst to End
Row Active)
X
ILLEGAL
CA, A10/AP ILLEGAL
RA, RA10
ILLEGAL
X
ILLEGAL
X
NOP (Continue Burst to End
Row Active)
X
NOP (Continue Burst to End
Row Active)
X
ILLEGAL
CA, A10/AP ILLEGAL
RA, RA10
ILLEGAL
X
ILLEGAL
Row (&Bank) Active ; Latch RA
NOP
Auto Refresh or Self Refresh
Mode Register Access
NOP
NOP
ILLEGAL
OP code
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
X
相關PDF資料 |
PDF描述 |
|---|---|
| M12L128324A-7BG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-7TG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-6BG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A-6TG | 1M x 32 Bit x 4 Banks Synchronous DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M12L128168A-7TG2L | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:ABSOLUTE MAXIMUM RATINGS |
| M12L128168A-7TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12L128324A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A_09 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
| M12L128324A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。