參數(shù)資料
型號(hào): LRS1805A
廠商: Sharp Corporation
英文描述: Stacked Chip 64M (x16) Flash Memory + 16M (x16) Smartcombo RAM
中文描述: 堆疊芯片64M號(hào)(x16)的閃存16M內(nèi)存(× 16)Smartcombo內(nèi)存
文件頁(yè)數(shù): 24/57頁(yè)
文件大小: 1373K
代理商: LRS1805A
LRS1805A
22
12.4 Block Erase, Full Chip Erase, (Page Buffer) Program Performance
(3)
(T
A
= -25°C to +85°C, F-V
CC
= 2.7V to 3.3V)
Notes:
1. Typical values measured at F-V
CC
=3.0V, F-V
PP
=3.0V or 12V, and T
A
=+25
°
C. Assumes corresponding lock bits are not
set. Subject to change based on device characterization.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (F-WE or F-CE going high) until SR.7 going “1”or F-RY/BY
going High-Z.
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
t
ERES
and its sequence is repeated, the block erase operation may not be finished.
Symbol
Parameter
Notes
Page Buffer
Command
is Used or
not Used
Not Used
F-V
PP
=V
PPH1
(In System)
F-V
PP
=V
PPH2
(In Manufacturing)
Unit
Min.
Typ.
(1)
Max.
(2)
Min.
Typ.
(1)
Max.
(2)
t
WPB
4K-Word Parameter Block
Program Time
2
0.05
0.3
0.04
0.12
s
2
2
2
Used
Not Used
Used
0.03
0.38
0.24
0.12
2.4
1
0.02
0.31
0.17
0.06
1
0.5
s
s
s
t
WMB
32K-Word Main Block
Program Time
t
WHQV1
/
t
EHQV1
t
WHQV2
/
t
EHQV2
t
WHQV3
/
t
EHQV3
Word Program Time
2
2
Not Used
Used
11
7
200
100
9
5
185
90
μ
s
μ
s
4K-Word Parameter Block
Erase Time
2
-
0.3
4
0.2
4
s
32K-Word Main Block
Erase Time
2
-
0.6
5
0.5
5
s
Full Chip Erase Time
2
80
700
s
t
WHRH1
/
t
EHRH1
t
WHRH2
/
t
EHRH2
(Page Buffer) Program Suspend
Latency Time to Read
4
-
5
10
5
10
μ
s
Block Erase Suspend
Latency Time to Read
4
-
5
20
5
20
μ
s
t
ERES
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
5
-
500
500
μ
s
sharp
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