參數(shù)資料
型號(hào): LRS1805A
廠商: Sharp Corporation
英文描述: Stacked Chip 64M (x16) Flash Memory + 16M (x16) Smartcombo RAM
中文描述: 堆疊芯片64M號(hào)(x16)的閃存16M內(nèi)存(× 16)Smartcombo內(nèi)存
文件頁數(shù): 22/57頁
文件大?。?/td> 1373K
代理商: LRS1805A
LRS1805A
20
12. AC Electrical Characteristics for Flash Memory
12.1 AC Test Conditions
Input pulse level
Input rise and fall time
12.2 Read Cycle
(T
A
= -25°C to +85°C, F-V
CC
= 2.7V to 3.3V)
Notes:
1. Sampled, not 100% tested.
2. F-OE may be delayed up to t
ELQV
t
GLQV
after the falling edge of F-CE without impact to t
ELQV
.
0 V to 2.7 V
5 ns
Input and Output timing Ref. level
1.35 V
Output load
1TTL + C
L
(50pF)
Symbol
t
AVAV
t
AVQV
t
ELQV
t
APA
t
GLQV
t
PHQV
t
EHQZ
, t
GHQZ
t
ELQX
t
GLQX
t
OH
Parameter
Notes
Min.
Max.
Unit
Read Cycle Time
85
ns
Address to Output Delay
85
ns
F-CE to Output Delay
2
85
ns
Page Address Access Time
35
ns
F-OE to Output Delay
2
20
ns
F-RST High to Output Delay
150
ns
F-CE or F-OE to Output in High-Z, Whichever Occurs First
1
20
ns
F-CE to Output in Low-Z
1
0
ns
F-OE to Output in Low-Z
1
0
ns
Output Hold from First Occurring Address, F-CE or F-OE change
1
0
ns
sharp
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