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參數(shù)資料
| 型號： | LRS1331 |
| 廠商： | Sharp Corporation |
| 英文描述： | Stacked Chip 16M Flash Memory and 4M SRAM |
| 中文描述： | 堆疊1,600閃存芯片和4M的SRAM |
| 文件頁數(shù)： | 5/26頁 |
| 文件大小： | 216K |
| 代理商： | LRS1331 |
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Stacked Chip (16M Flash & 4M SRAM)
LRS1331
Data Sheet
5
NOTES:
1. Commands other than those shown in table are reserved by SHARP for future device
implementations and should not be used.
2. BUS operations are defined in Table 2.
3. XA = Any valid address within the device;
IA = Identifier code address;
BA = Address within the block being erased;
WA = Address of memory location to be written;
SRD = Data read from status register;
WD = Data to be written at location WA. Data is latched on the
rising edge of F-WE or F-CE (whichever goes HIGH first);
ID = Data read from identifier codes.
4. See Table 4 for Identifier Codes.
5. See Table 5 for Write Protection Alternatives.
6. If the permanent lock-bit is set, Set Block Lock-Bit and Clear Block Lock-Bits commands cannot be done.
7. The clear block lock-bits operation simultaneously clears all block lock-bits.
NOTES:
1. DQ
8
- DQ
15
outputs 00H in word mode. DQ
1
- DQ
7
are reserved for future use.
2. BA selects the specific block lock configuration code to be read. See Figure 3
for the device identifier code memory map.
Table 3. Command Definition for Flash Memory
1
COMMAND
BUS CYCLES
REQUIRED
FIRST BUS CYCLE
ADDRESS
3
SECOND BUS CYCLE
OPERATION
2
NOTES
OPERATION
2
DATA
3
ADDRESS
3
DATA
3
Read Array/Reset
1
Write
XA
FFH
Read Identifier Codes
≥
2
Write
XA
90H
Read
IA
ID
4
Read Status Register
2
Write
XA
70H
Read
XA
SRD
Clear Status Register
1
Write
XA
50H
Block Erase
2
Write
BA
20H
Write
BA
D0H
5
Full Chip Erase
2
Write
XA
30H
Write
XA
D0H
Word Write
2
Write
WA
40H or 10H
Write
WA
WD
5
Block Erase and Word
Write Suspend
1
Write
XA
B0H
5
Block Erase and
Write Resume
1
Write
XA
D0H
5
Set Block Lock-Bits
2
Write
BA
60H
Write
BA
01H
6
Clear Block Lock-Bits
2
Write
XA
60H
Write
XA
D0H
6, 7
Set Permanent Lock-Bits
2
Write
XA
60H
Write
XA
F1H
Table 4. Identifier Codes
CODES
ADDRESS (A
0
- A
19
)
00000H
00001H
BA + 2
BA + 2
00003H
00003H
DATA (DQ
0
- DQ
7
)
1
B0H
E9H
DQ
0
= 0
DQ
0
= 1
DQ
0
= 0
DQ
0
= 1
NOTES
Manufacture Code
Device Code
Block Lock
Configuration
Block is Unlocked
Block is Locked
Device is Unlocked
Device is Locked
2
2
Permanent Lock
Configuration
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LRS1337 | Stacked Chip 32M Flash Memory and 4M SRAM |
| LRS1338A | Stacked Chip 8M Flash Memory and 2M SRAM |
| LRS1341 | Stacked Chip 16M Flash Memory and 2M SRAM |
| LRS1805A | Stacked Chip 64M (x16) Flash Memory + 16M (x16) Smartcombo RAM |
| LRS250 | LIGHT EMITTING DIODES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LRS1337 | 制造商:Sharp Microelectronics Corporation 功能描述:32M (2MX16) FLASH, 4M (256KX16) SRAM, 3V, CSP72 - Trays |
| LRS1338A | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Stacked Chip 8M Flash Memory and 2M SRAM |
| LRS1341 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Stacked Chip 16M Flash Memory and 2M SRAM |
| LRS1342 | 制造商:Sharp Microelectronics Corporation 功能描述:COMBO 1MX16 FLASH + 128KX16 SRAM 2.7V TO 3.6V 72FBGA - Trays |
| LRS1348 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
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