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參數(shù)資料
| 型號： | LH28F640BFHG-PBTLZ7 |
| 廠商： | Sharp Corporation |
| 英文描述： | 64M (x16) Flash Memory |
| 中文描述： | 6400（x16）的快閃記憶體 |
| 文件頁數(shù)： | 6/36頁 |
| 文件大?。?/td> | 557K |
| 代理商： | LH28F640BFHG-PBTLZ7 |
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LHF64FD5 4
Table 1. Pin Descriptions
Symbol
A
0
-A
21
Type
INPUT
Name and Function
ADDRESS INPUTS: Inputs for addresses. 64M: A
0
-A
21
DATA INPUTS/OUTPUTS: Inputs data and commands during CUI (Command User
Interface) write cycles, outputs data during memory array, status register, query code,
identifier code and partition configuration register code reads. Data pins float to high-
impedance (High Z) when the chip or outputs are deselected. Data is internally latched
during an erase or program cycle.
CHIP ENABLE: Activates the device
’
s control logic, input buffers, decoders and sense
amplifiers. CE#-high (V
IH
) deselects the device and reduces power consumption to
standby levels.
RESET: When low (V
IL
), RST# resets internal automation and inhibits write operations
which provides data protection. RST#-high (V
IH
) enables normal operation. After
power-up or reset mode, the device is automatically set to read array mode. RST# must
be low during power-up/down.
OUTPUT ENABLE: Gates the device
’
s outputs during a read cycle.
WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are
latched on the rising edge of CE# or WE# (whichever goes high first).
WRITE PROTECT: When WP# is V
IL
, locked-down blocks cannot be unlocked. Erase
or program operation can be executed to the blocks which are not locked and not locked-
down. When WP# is V
IH
, lock-down is disabled.
MONITORING POWER SUPPLY VOLTAGE: V
PP
is not used for power supply pin.
With V
PP
≤
V
PPLK
, block erase, full chip erase, (page buffer) program or OTP program
cannot be executed and should not be attempted.
Applying 12V±0.3V to V
PP
provides fast erasing or fast programming mode. In this
mode, V
PP
is power supply pin. Applying 12V±0.3V to V
PP
during erase/program can
only be done for a maximum of 1,000 cycles on each block. V
PP
may be connected to
12V±0.3V for a total of 80 hours maximum. Use of this pin at 12V beyond these limits
may reduce block cycling capability or cause permanent damage.
DEVICE POWER SUPPLY (2.7V-3.6V): With V
CC
≤
V
LKO
, all write attempts to the
flash memory are inhibited. Device operations at invalid V
CC
voltage (see DC
Characteristics) produce spurious results and should not be attempted.
INPUT/OUTPUT POWER SUPPLY (2.7V-3.6V): Power supply for all input/output
pins.
GROUND: Do not float any ground pins.
DQ
0
-DQ
15
INPUT/
OUTPUT
CE#
INPUT
RST#
INPUT
OE#
INPUT
WE#
INPUT
WP#
INPUT
V
PP
INPUT
V
CC
SUPPLY
V
CCQ
SUPPLY
GND
SUPPLY
Rev. 2.44
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|---|---|
| LH28F640SP | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
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| LH28F800BVE-BV85 | 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術閃速存儲器) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F640SP | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F640SPHT-PL12A | 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F640SPHT-PTL12 | 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| LH28F640SPHT-PTLZ8 | 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F800 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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