- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358792 > LH28F640BFHG-PBTLZ7 (Sharp Corporation) 64M (x16) Flash Memory PDF資料下載
參數(shù)資料
| 型號： | LH28F640BFHG-PBTLZ7 |
| 廠商： | Sharp Corporation |
| 英文描述： | 64M (x16) Flash Memory |
| 中文描述： | 6400（x16）的快閃記憶體 |
| 文件頁數(shù)： | 14/36頁 |
| 文件大?。?/td> | 557K |
| 代理商： | LH28F640BFHG-PBTLZ7 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
LHF64FD5 12
NOTES:
1. DQ
0
=1: a block is locked; DQ
0
=0: a block is unlocked.
DQ
1
=1: a block is locked-down; DQ
1
=0: a block is not locked-down.
2. Erase and program are general terms, respectively, to express: block erase, full chip erase and
(page buffer) program operations.
3. At power-up or device reset, all blocks default to locked state and are not locked-down, that is,
[001] (WP#=0) or [101] (WP#=1), regardless of the states before power-off or reset operation.
4. When WP# is driven to V
IL
in [110] state, the state changes to [011] and the blocks are
automatically locked.
5. OTP (One Time Program) block has the lock function which is different from those described
above.
NOTES:
1. "Set Lock" means Set Block Lock Bit command, "Clear Lock" means Clear Block Lock Bit
command and "Set Lock-down" means Set Block Lock-Down Bit command.
2. When the Set Block Lock-Down Bit command is written to the unlocked block (DQ
0
=0), the
corresponding block is locked-down and automatically locked at the same time.
3. "No Change" means that the state remains unchanged after the command written.
4. In this state transitions table, assumes that WP# is not changed and fixed V
IL
or V
IH
.
Table 7. Functions of Block Lock
(5)
and Block Lock-Down
Current State
Erase/Program Allowed
(2)
State
WP#
DQ
1(1)
0
0
DQ
0(1)
0
1
State Name
[000]
0
0
Unlocked
Locked
Yes
No
[001]
(3)
[011]
[100]
0
1
1
1
0
0
1
0
1
Locked-down
Unlocked
Locked
No
Yes
No
[101]
(3)
[110]
(4)
[111]
1
1
0
Lock-down Disable
Yes
1
1
1
Lock-down Disable
No
Table 8. Block Locking State Transitions upon Command Write
(4)
Current State
Result after Lock Command Written (Next State)
State
WP#
DQ
1
DQ
0
Set Lock
(1)
Clear Lock
(1)
Set Lock-down
(1)
[000]
0
0
0
[001]
No Change
[011]
(2)
[011]
[001]
0
0
1
No Change
(3)
No Change
[101]
[000]
[011]
[100]
0
1
1
0
1
0
No Change
No Change
No Change
[111]
(2)
[111]
[101]
[110]
1
1
0
1
1
0
No Change
[111]
[100]
No Change
[111]
(2)
No Change
[111]
1
1
1
No Change
[110]
Rev. 2.44
相關PDF資料 |
PDF描述 |
|---|---|
| LH28F640SP | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F640SPHT-PTL12 | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F800BVE-BV85 | 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術閃速存儲器) |
| LH28F800BVE-TV85 | 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術閃速存儲器) |
| LH28F800BVHE-BTL90 | 8M (1M x 8/512K x 16)Smart3 Flash Memory(8M (1M x 8/512K x 16)Smart3技術閃速存儲器) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F640SP | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F640SPHT-PL12A | 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F640SPHT-PTL12 | 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| LH28F640SPHT-PTLZ8 | 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F800 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
發(fā)布緊急采購，3分鐘左右您將得到回復。