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參數(shù)資料
| 型號： | LH28F640BFHG-PBTLZ7 |
| 廠商： | Sharp Corporation |
| 英文描述： | 64M (x16) Flash Memory |
| 中文描述： | 6400（x16）的快閃記憶體 |
| 文件頁數(shù)： | 12/36頁 |
| 文件大?。?/td> | 557K |
| 代理商： | LH28F640BFHG-PBTLZ7 |
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LHF64FD5 10
NOTES:
1. Bus operations are defined in Table 5.
2. All addresses which are written at the first bus cycle should be the same as the addresses which are written at the second
bus cycle.
X=Any valid address within the device.
PA=Address within the selected partition.
IA=Identifier codes address (See Table 3 and Table 4).
QA=Query codes address. Refer to Appendix of LH28F640BF series for details.
BA=Address within the block being erased, set/cleared block lock bit or set block lock-down bit.
WA=Address of memory location for the Program command or the first address for the Page Buffer Program command.
OA=Address of OTP block to be read or programmed (See Figure 3).
PCRC=Partition configuration register code presented on the address A
0
-A
15
.
3. ID=Data read from identifier codes. (See Table 3 and Table 4).
QD=Data read from query database. Refer to Appendix of LH28F640BF series for details.
SRD=Data read from status register. See Table 10 and Table 11 for a description of the status register bits.
WD=Data to be programmed at location WA. Data is latched on the rising edge of WE# or CE# (whichever
goes high first) during command write cycles.
OD=Data within OTP block. Data is latched on the rising edge of WE# or CE# (whichever goes high first)
during command write cycles.
N-1=N is the number of the words to be loaded into a page buffer.
4. Following the Read Identifier Codes/OTP command, read operations access manufacturer code, device code, block lock
configuration code, partition configuration register code and the data within OTP block (See Table 3 and Table 4).
The Read Query command is available for reading CFI (Common Flash Interface) information.
5. Block erase, full chip erase or (page buffer) program cannot be executed when the selected block is locked. Unlocked
block can be erased or programmed when RST# is V
IH
.
6. Either 40H or 10H are recognized by the CUI (Command User Interface) as the program setup.
7. Following the third bus cycle, input the program sequential address and write data of "N" times. Finally, input the any
valid address within the target block to be programmed and the confirm command (D0H). Refer to Appendix of
Table 6. Command Definitions
(11)
Command
Bus
Cycles
Req
’
d
1
≥
2
≥
2
2
1
2
2
Notes
First Bus Cycle
Second Bus Cycle
Oper
(1)
Addr
(2)
Data
Oper
(1)
Addr
(2)
Data
(3)
Read Array
Read Identifier Codes/OTP
Read Query
Read Status Register
Clear Status Register
Block Erase
Full Chip Erase
Program
Write
Write
Write
Write
Write
Write
Write
PA
PA
PA
PA
PA
BA
X
FFH
90H
98H
70H
50H
20H
30H
40H or
10H
E8H
4
4
Read
Read
Read
IA or OA
QA
PA
ID or OD
QD
SRD
5
Write
Write
BA
X
D0H
D0H
5,9
2
5,6
Write
WA
Write
WA
WD
Page Buffer Program
Block Erase and (Page Buffer)
Program Suspend
Block Erase and (Page Buffer)
Program Resume
Set Block Lock Bit
Clear Block Lock Bit
Set Block Lock-down Bit
OTP Program
Set Partition Configuration Register
≥
4
5,7
Write
WA
Write
WA
N-1
1
8,9
Write
PA
B0H
1
8,9
Write
PA
D0H
2
2
2
2
2
Write
Write
Write
Write
Write
BA
BA
BA
OA
PCRC
60H
60H
60H
C0H
60H
Write
Write
Write
Write
Write
BA
BA
BA
OA
PCRC
01H
D0H
2FH
OD
04H
10
9
Rev. 2.44
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相關代理商/技術參數(shù) |
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| LH28F640SP | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F640SPHT-PL12A | 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F640SPHT-PTL12 | 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| LH28F640SPHT-PTLZ8 | 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F800 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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