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參數(shù)資料
| 型號： | LH28F640BFHG-PBTLZ7 |
| 廠商： | Sharp Corporation |
| 英文描述： | 64M (x16) Flash Memory |
| 中文描述： | 6400（x16）的快閃記憶體 |
| 文件頁數(shù)： | 16/36頁 |
| 文件大小： | 557K |
| 代理商： | LH28F640BFHG-PBTLZ7 |
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LHF64FD5 14
Table 10. Status Register Definition
R
15
R
14
R
13
R
12
R
11
R
10
R
9
R
8
R
0
WSMS
7
SR.15 - SR.8 = RESERVED FOR FUTURE
ENHANCEMENTS (R)
BESS
6
BEFCES
5
PBPOPS
4
VPPS
3
PBPSS
2
DPS
1
SR.7 = WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
SR.6 = BLOCK ERASE SUSPEND STATUS (BESS)
1 = Block Erase Suspended
0 = Block Erase in Progress/Completed
SR.5 = BLOCK ERASE AND FULL CHIP ERASE
STATUS (BEFCES)
1 = Error in Block Erase or Full Chip Erase
0 = Successful Block Erase or Full Chip Erase
SR.4 = (PAGE BUFFER) PROGRAM AND
OTP PROGRAM STATUS (PBPOPS)
1 = Error in (Page Buffer) Program or OTP Program
0 = Successful (Page Buffer) Program or OTP Program
SR.3 = V
PP
STATUS (VPPS)
1 = V
PP
LOW Detect, Operation Abort
0 = V
PP
OK
SR.2 = (PAGE BUFFER) PROGRAM SUSPEND
STATUS (PBPSS)
1 = (Page Buffer) Program Suspended
0 = (Page Buffer) Program in Progress/Completed
SR.1 = DEVICE PROTECT STATUS (DPS)
1 = Erase or Program Attempted on a
Locked Block, Operation Abort
0 = Unlocked
SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R)
NOTES:
Status Register indicates the status of the partition, not WSM
(Write State Machine). Even if the SR.7 is "1", the WSM may
be occupied by the other partition when the device is set to 2,
3 or 4 partitions configuration.
Check SR.7 to determine block erase, full chip erase, (page
buffer) program or OTP program completion. SR.6 - SR.1 are
invalid while SR.7="0".
If both SR.5 and SR.4 are "1"s after a block erase, full chip
erase, (page buffer) program, set/clear block lock bit, set
block lock-down bit, set partition configuration register
attempt, an improper command sequence was entered.
SR.3 does not provide a continuous indication of V
PP
level.
The WSM interrogates and indicates the V
PP
level only after
Block Erase, Full Chip Erase, (Page Buffer) Program or OTP
Program command sequences. SR.3 is not guaranteed to
report accurate feedback when V
PP
≠
V
PPH1
, V
PPH2
or V
PPLK
.
SR.1 does not provide a continuous indication of block lock
bit. The WSM interrogates the block lock bit only after Block
Erase, Full Chip Erase, (Page Buffer) Program or OTP
Program command sequences. It informs the system,
depending on the attempted operation, if the block lock bit is
set. Reading the block lock configuration codes after writing
the Read Identifier Codes/OTP command indicates block
lock bit status.
SR.15 - SR.8 and SR.0 are reserved for future use and should
be masked out when polling the status register.
Rev. 2.44
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F640SP | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F640SPHT-PL12A | 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F640SPHT-PTL12 | 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| LH28F640SPHT-PTLZ8 | 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F800 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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