- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358792 > LH28F640BFHG-PBTLZ7 (Sharp Corporation) 64M (x16) Flash Memory PDF資料下載
參數(shù)資料
| 型號： | LH28F640BFHG-PBTLZ7 |
| 廠商： | Sharp Corporation |
| 英文描述： | 64M (x16) Flash Memory |
| 中文描述： | 6400（x16）的快閃記憶體 |
| 文件頁數(shù)： | 4/36頁 |
| 文件大小： | 557K |
| 代理商： | LH28F640BFHG-PBTLZ7 |
第1頁第2頁第3頁當(dāng)前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
LHF64FD5 2
LH28F640BFHG-PBTLZ7
64Mbit (4Mbit
×
16)
Page Mode Dual Work Flash MEMORY
64M density with 16Bit I/O Interface
High Performance Reads
80/35ns 8-Word Page Mode
Configurative 4-Plane Dual Work
Flexible Partitioning
Read operations during Block Erase or (Page Buffer)
Program
Status Register for Each Partition
Low Power Operation
2.7V Read and Write Operations
V
CCQ
for Input/Output Power Supply Isolation
Automatic Power Savings Mode Reduces I
CCR
in Static Mode
Enhanced Code + Data Storage
5
μ
s Typical Erase/Program Suspends
OTP (One Time Program) Block
4-Word Factory-Programmed Area
4-Word User-Programmable Area
High Performance Program with Page Buffer
16-Word Page Buffer
5
μ
s/Word (Typ.) at 12V V
PP
Operating Temperature -40
°
C to +85
°
C
CMOS Process (P-type silicon substrate)
Flexible Blocking Architecture
Eight 4K-word Parameter Blocks
One-hundred and twenty-seven 32K-word Main
Blocks
Bottom Parameter Location
Enhanced Data Protection Features
Individual Block Lock and Block Lock-Down with
Zero-Latency
All blocks are locked at power-up or device reset.
Absolute Protection with V
PP
≤
V
PPLK
Block Erase, Full Chip Erase, (Page Buffer) Word
Program Lockout during Power Transitions
Automated Erase/Program Algorithms
3.0V Low-Power
11μ
s/Word (Typ.)
Programming
12V No Glue Logic 9
μ
s/Word (Typ.)
Production Programming and 0.5s Erase (Typ.)
Cross-Compatible Command Support
Basic Command Set
Common Flash Interface (CFI)
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
0.75mm pitch 48-Ball CSP (8mm
×
11mm)
ETOX
TM*
Flash Technology
Not designed or rated as radiation hardened
The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low
power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can
operate at V
CC
=2.7V-3.6V and V
PP
=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends
battery life for portable applications.
The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus
eliminating time consuming wait states. Furthermore, its newly configurative partitioning architecture allows flexible dual
work operation.
The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main
Blocks that provide maximum flexibility for safe nonvolatile code and data storage.
Fast program capability is provided through the use of high speed Page Buffer Program.
Special OTP (One Time Program) block provides an area to store permanent code such as a unique number.
* ETOX is a trademark of Intel Corporation.
Rev. 2.44
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F640SP | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F640SPHT-PTL12 | 64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F800BVE-BV85 | 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術(shù)閃速存儲器) |
| LH28F800BVE-TV85 | 8M (1M x 8/512K x 16)Smart5 Flash Memory(8M (1M x 8/512K x 16)Smart5技術(shù)閃速存儲器) |
| LH28F800BVHE-BTL90 | 8M (1M x 8/512K x 16)Smart3 Flash Memory(8M (1M x 8/512K x 16)Smart3技術(shù)閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F640SP | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory |
| LH28F640SPHT-PL12A | 功能描述:閃存 64MB X8/X16 3V DUAL SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F640SPHT-PTL12 | 功能描述:IC FLASH 64MBIT 120NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| LH28F640SPHT-PTLZ8 | 功能描述:閃存 64M (x8/x16) 3V Dual Supply RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| LH28F800 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。