- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358791 > LH28F320S3H-L (Sharp Corporation) 32 M-bit(4 MB x 8/2 MB x 16)Smart3 Flash Memories(32M位 (4M位 x 8/2M位 x 16) Smart3 技術(shù)閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | LH28F320S3H-L |
| 廠商： | Sharp Corporation |
| 英文描述： | 32 M-bit(4 MB x 8/2 MB x 16)Smart3 Flash Memories(32M位 (4M位 x 8/2M位 x 16) Smart3 技術(shù)閃速存儲器) |
| 中文描述： | 32 M位（4字節(jié)× 8 / 2 MB的× 16）Smart3閃存（32兆位（4分位x 8/2M位× 16）Smart3技術(shù)閃速存儲器） |
| 文件頁數(shù)： | 5/51頁 |
| 文件大?。?/td> | 340K |
| 代理商： | LH28F320S3H-L |
第1頁第2頁第3頁第4頁當前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
operation of the device. A valid command sequence
written to the CUI initiates device automation. An
internal Write State Machine (WSM) automatically
executes the algorithms and timings necessary for
block erase, full chip erase, (multi) word/byte write
and block lock-bit configuration operations.
1 INTRODUCTION
This datasheet contains LH28F320S3-L/S3H-L
specifications. Section 1 provides a flash memory
overview. Sections 2, 3, 4, and 5 describe the
memory organization and functionality. Section 6
covers electrical specifications. LH28F320S3-L/
S3H-L flash memories documentation also includes
ordering information which is referenced in Section 7.
1.1
The LH28F320S3-L/S3H-L are high-performance
32 M-bit Smart 3 flash memories organized as
4 MB x 8/2 MB x 16. The 4 MB of data is arranged
in sixty-four 64 k-byte blocks which are individually
erasable, lockable, and unlockable in-system. The
memory map is shown in
Fig. 1
.
Product Overview
Smart 3 technology provides a choice of V
CC
and
V
PP
combinations, as shown in
Table 1
, to meet
system performance and power expectations. V
PP
at 2.7 V, 3.3 V and 5 V eliminates the need for a
separate 12 V converter. In addition to flexible
erase and program voltages, the dedicated V
PP
pin
gives complete data protection when V
PP
≤
V
PPLK
.
Table 1 V
CC
and V
PP
Voltage Combinations
Offered by Smart 3 Technology
Internal V
CC
and V
PP
detection circuitry auto-
matically configures the device for optimized read
and write operations.
A Command User Interface (CUI) serves as the
interface between the system processor and internal
A block erase operation erases one of the device’s
64 k-byte blocks typically within 0.41 second (3.3 V
V
CC
, 5 V V
PP
) independent of other blocks. Each
block can be independently erased 100 000 times
(6.4 million block erases per device). Block erase
suspend mode allows system software to suspend
block erase to read data from, or write data to any
other block.
A word/byte write is performed in byte increments
typically within 12.95 μs (3.3 V V
CC
, 5 V V
PP
). A
multi word/byte write has high speed write
performance of 2.7 μs/byte (3.3 V V
CC
, 5 V V
PP
).
(Multi) word/byte write suspend mode enables the
system to read data from, or write data to any other
flash memory array location.
Individual block locking uses a combination of bits
and WP#, sixty-four block lock-bits, to lock and
unlock blocks. Block lock-bits gate block erase, full
chip erase and (multi) word/byte write operations.
Block lock-bit configuration operations (Set Block
Lock-Bit and Clear Block Lock-Bits commands) set
and cleared block lock-bits.
The status register indicates when the WSM’s block
erase, full chip erase, (multi) word/byte write or
block lock-bit configuration operation is finished.
The STS output gives an additional indicator of
WSM activity by providing both a hardware signal
of status (versus software polling) and status
masking (interrupt masking for background block
erase, for example). Status polling using STS
minimizes both CPU overhead and system power
consumption. STS pin can be configured to
different states using the Configuration command.
The STS pin defaults to RY/BY# operation. When
low, STS indicates that the WSM is performing a
block erase, full chip erase, (multi) word/byte write
or block lock-bit configuration. STS High Z indicates
that the WSM is ready for a new command, block
V
CC
VOLTAGE
2.7 V
3.3 V
V
PP
VOLTAGE
2.7 V, 3.3 V, 5 V
3.3 V, 5 V
LH28F320S3-L/S3H-L
- 5 -
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F320S3HNS-L11 | 32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY |
| LH28F320S3NS | Smart voltage 32Mbit Flash Memory |
| LH28F320S3TD-L10 | 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory |
| LH28F320S3 | 32M (4M x8/2M x16)Smart 3 Flash Memory(32M (4M x8/2M x16) Smart3 技術(shù) 閃速存儲器) |
| LH28F320S5H-L | 32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M位( 2M位 x16 / 4M位 x8 )Boot Block 閃速存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F320S3H-L11 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY |
| LH28F320S3H-L14 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY |
| LH28F320S3HNS-L11 | 功能描述:IC FLASH 32MBIT 110NS 56SSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| LH28F320S3HNS-L14 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY |
| LH28F320S3HNS-ZM | 功能描述:IC FLASH 32MBIT 110NS 56SSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。