參數(shù)資料
型號(hào): LH28F160S3NS-L13
英文描述: EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC
中文描述: 的EEPROM | FLASH動(dòng)畫| 1MX16/2MX8 |的CMOS |??苵 56PIN |塑料
文件頁數(shù): 40/56頁
文件大?。?/td> 373K
代理商: LH28F160S3NS-L13
LH28F160S5-L/S5H-L
- 40 -
SYMBOL
t
AVAV
t
AVQV
t
ELQV
t
PHQV
t
GLQV
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
PARAMETER
NOTE
MIN.
70
MAX.
MIN.
90
MAX.
MIN.
100
MAX.
Read Cycle Time
Address to Output Delay
CE# to Output Delay
RP# High to Output Delay
OE# to Output Delay
CE# to Output in Low Z
CE# High to Output in High Z
OE# to Output in Low Z
OE# High to Output in High Z
Output Hold from Address,
CE# or OE# Change,
Whichever Occurs First
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
400
30
90
90
400
35
100
100
400
40
2
2
3
3
3
3
0
0
0
25
30
35
0
0
0
10
10
15
t
OH
3
0
0
0
ns
t
FLQV
t
FHQV
t
FLQZ
t
ELFL
t
ELFH
NOTES :
1.
See AC Input/Output Reference Waveform (
Fig. 12
and
Fig. 13
) for maximum allowable input slew rate.
2.
OE# may be delayed up to t
ELQV
-t
GLQV
after the falling
edge of CE# without impact on t
ELQV
.
3.
Sampled, not 100% tested.
4.
See
Fig. 12
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (High Speed Configuration) for testing
characteristics.
BYTE# to Output Delay
3
70
90
100
ns
BYTE# to Output in High Z
CE# Low to BYTE#
High or Low
3
25
30
30
ns
3
5
5
5
ns
VERSIONS
V
CC
±0.25 V
V
CC
±0.5 V
(NOTE 4)
LH28F160S5H-L70
(NOTE 5)
LH28F160S5H-L10
(NOTE 5)
LH28F160S5H-L70
UNIT
V
CC
= 5.0±0.25 V, 5.0±0.5V, T
A
= –40 to +85°C
5.
See
Fig. 13
"
Transient Input/Output Reference
Waveform
" and
Fig. 14
"
Transient Equivalent Testing
Load Circuit
" (Standard Configuration) for testing
characteristics.
6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS (contd.)
(NOTE1)
[LH28F160S5H-L]
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