參數(shù)資料
型號(hào)： LH28F160BHE-TTL90
廠商： Sharp Corporation
英文描述： 16M (x8/x16) Flash Memory
中文描述： 1,600（x8/x16）閃存
文件頁數(shù)： 16/46頁
文件大?。?/td> 679K
代理商： LH28F160BHE-TTL90
LHF16J04
14
Rev. 1.26
4.8 Block Erase Suspend Command
The Block Erase Suspend command allows block-erase
interruption to read or word/byte write data in another
block of memory. Once the block erase process starts,
writing the Block Erase Suspend command requests that
the WSM suspend the block erase sequence at a
predetermined point in the algorithm. The device outputs
status register data when read after the Block Erase
Suspend command is written. Polling status register bits
SR.7 and SR.6 can determine when the block erase
operation has been suspended (both will be set to "1").
RY/BY# will also transition to High Z. Specification
t
WHRZ2
defines the block erase suspend latency.
When Block Erase Suspend command write to the CUI, if
block erase was finished, the device places read array
mode. Therefore, after Block Erase Suspend command
write to the CUI, Read Status Register command (70H)
has to write to CUI, then status register bit SR.6 should be
checked for places the device in suspend mode.
At this point, a Read Array command can be written to
read data from blocks other than that which is suspended.
A Word/Byte Write command sequence can also be issued
during erase suspend to program data in other blocks.
Using the Word/Byte Write Suspend command (see
Section 4.9), a word/byte write operation can also be
suspended. During a word/byte write operation with block
erase suspended, status register bit SR.7 will return to "0"
and the RY/BY# output will transition to V
OL
. However,
SR.6 will remain "1" to indicate block erase suspend
status.
The only other valid commands while block erase is
suspended are Read Status Register and Block Erase
Resume. After a Block Erase Resume command is written
to the flash memory, the WSM will continue the block
erase process. Status register bits SR.6 and SR.7 will
automatically clear and RY/BY# will return to V
OL
. After
the Erase Resume command is written, the device
automatically outputs status register data when read (see
Figure 8). V
CCW
must remain at V
CCWH1/2
(the same
V
CCW
level used for block erase) while block erase is
suspended. RP# must also remain at V
IH
. WP# must also
remain at V
IL
or V
IH
(the same WP# level used for block
erase). Block erase cannot resume until word/byte write
operations initiated during block erase suspend have
completed.
If the period of from Block Erase Resume command write
to the CUI till Block Erase Suspend command write to the
CUI be short and done again and again, erase time be
prolonged.
4.9 Word/Byte Write Suspend Command
The Word/Byte Write Suspend command allows
word/byte write interruption to read data in other flash
memory locations. Once the word/byte write process
starts, writing the Word/Byte Write Suspend command
requests that the WSM suspend the Word/Byte write
sequence at a predetermined point in the algorithm. The
device continues to output status register data when read
after the Word/Byte Write Suspend command is written.
Polling status register bits SR.7 and SR.2 can determine
when the word/byte write operation has been suspended
(both will be set to "1"). RY/BY# will also transition to
High Z. Specification t
WHRZ1
defines the word/byte write
suspend latency.
When Word/Byte Write Suspend command write to the
CUI, if word/byte write was finished, the device places
read array mode. Therefore, after Word/Byte Write
Suspend command write to the CUI, Read Status Register
command (70H) has to write to CUI, then status register
bit SR.2 should be checked for places the device in
suspend mode.
At this point, a Read Array command can be written to
read data from locations other than that which is
suspended. The only other valid commands while
word/byte write is suspended are Read Status Register and
Word/Byte Write Resume. After Word/Byte Write
Resume command is written to the flash memory, the
WSM will continue the word/byte write process. Status
register bits SR.2 and SR.7 will automatically clear and
RY/BY# will return to V
OL
. After the Word/Byte Write
Resume command is written, the device automatically
outputs status register data when read (see Figure 9).
V
CCW
must remain at V
CCWH1/2
(the same V
CCW
level
used for word/byte write) while in word/byte write
suspend mode. RP# must also remain at V
IH
. WP# must
also remain at V
IL
or V
IH
(the same WP# level used for
word/byte write).
If the period of from Word/Byte Write Resume command
write to the CUI till Word/Byte Write Suspend command
write to the CUI be short and done again and again, write
time be prolonged.
相關(guān)PDF資料
PDF描述
LH28F160BJE-BTL90 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJE-TTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJHE-BTL70 16M-BIT(1Mbit x16/2Mbit x8)Boot Block Flash MEMORY(16M位(1M位 x16/2M位 x8)Boot Block 閃速存儲(chǔ)器)
LH28F160BJHE-TTL90 16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M位( 1M位 x16 / 2M位 x8 )Boot Block 閃速存儲(chǔ)器)
LH28F160BVE-BTL90 16M-BIT(2Mbit x8/1Mbit x16)Boot Block Flash MEMORY(16M位(2M位x8/1M位 x16)Boot Block 閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F160BJB-BTL90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJB-TTL90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJB-TTLZS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F160BJE-BTL90 功能描述:IC FLASH 16MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
LH28F160BJE-TTL90 制造商:Sharp Microelectronics Corporation 功能描述:NOR Flash Parallel 3.3V 16Mbit 2M/1M x 8bit/16bit 90ns 48-Pin TSOP
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*