參數(shù)資料
型號: KS57P21832
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CMOS technology provides for low power consumption and a wide operating voltage range.
中文描述: CMOS技術(shù)提供了低功耗和寬工作電壓范圍。
文件頁數(shù): 32/34頁
文件大小: 274K
代理商: KS57P21832
KS57P21832 OTP
KS57C21832/P21832
16-4
Table 16-4. D.C. Electrical Characteristics
(T
A
= - 40
°
C to + 85
°
C, V
DD
= 1.8 V to 5.5 V)
Parameter
Supply
Current
Symbol
I
DD1
(2)
Conditions
Min
Typ
5.1
3.9
Max
10.0
7.5
Units
mA
V
DD
= 5 V
±
10%
Crystal oscillator
C1 = C2 = 22 pF
V
DD
= 3 V ± 10%
6.0 MHz
4.19 MHz
6.0 MHz
4.19 MHz
2.5
1.8
4.0
3.0
I
DD2
(2)
Idle mode;
V
DD
= 5 V
±
10%
Crystal oscillator
C1 = C2 = 22 pF
V
DD
= 3 V ± 10%
6.0 MHz
4.19 MHz
1.3
1.2
2.5
1.8
6.0 MHz
4.19 MHz
0.5
0.44
1.5
1.0
I
DD3
(3)
V
DD
= 3 V ± 10%
32 kHz crystal oscillator
Idle mode; V
DD
= 3 V ± 10%
32 kHz crystal oscillator
22.8
35
μA
I
DD4
(3)
6.4
15
I
DD5
Stop mode;
V
DD
= 5 V ± 10%
SCMOD =
0000B
XT = 0V
2.5
5
Stop mode;
V
DD
= 3 V ± 10%
0.5
3
Stop mode;
V
DD
= 5 V ± 10%
SCMOD =
0100B
0.2
3
Stop mode;
V
DD
= 3 V ± 10%
0.1
2
NOTES:
1.
2.
Data includes power consumption for subsystem clock oscillation.
When the system clock control register, SCMOD, is set to 1001B, main system clock oscillation stops and the
subsystem clock is used.
Currents in the following circuits are not included; on-chip pull-up resistors, internal LCD voltage dividing resistors,
output port drive currents.
3.
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