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| 型號： | KS57P21832 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMOS technology provides for low power consumption and a wide operating voltage range. |
| 中文描述： | CMOS技術(shù)提供了低功耗和寬工作電壓范圍。 |
| 文件頁數(shù)： | 31/34頁 |
| 文件大?。?/td> | 274K |
| 代理商： | KS57P21832 |
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KS57C21832/P21832
KS57P21832 OTP
16-3
Table 16-1. Descriptions of Pins Used to Read/Write the EPROM
Main Chip
Pin Name
P0.2
During Programming
I/O
I/O
Serial data pin. Output port when reading and
input port when writing. Can be assigned as a
Input / push-pull output port.
I/O
Serial clock pin. Input only pin.
Pin Name
SDAT
Pin No.
13
Function
P0.3
SCLK
14
TEST
V
PP
(TEST)
19
I
Power supply pin for EPROM cell writing
(indicates that OTP enters into the writing mode).
When 12.5 V is applied, OTP is in writing mode
and when 5 V is applied, OTP is in reading
mode. (Option)
Chip initialization
Logic power supply pin. V
DD
should be tied to
+ 5 V during programming.
RESET
V
DD
/V
SS
RESET
V
DD
/V
SS
22
I
15/16
I
Table 16-2. Comparison of KS57P21832 and KS57C21832 Features
Characteristic
Program Memory
Operating Voltage (V
DD
)
OTP Programming Mode
KS57P21832
KS57C21832
32 Kbyte EPROM
32 Kbyte mask ROM
1.8 V to 5.5 V
1.8 V to 5.5 V
V
DD
= 5 V, V
PP
(TEST) = 12.5 V
100 QFP
User Program 1 time
Pin Configuration
EPROM Programmability
100 QFP
Programmed at the factory
OPERATING MODE CHARACTERISTICS
When 12.5 V is supplied to the VPP(TEST) pin of the KS57P21832, the EPROM programming mode is entered.
The operating mode (read, write, or read protection) is selected according to the input signals to the pins listed in
Table 16-3 below.
Table 16-3. Operating Mode Selection Criteria
V
DD
V
PP
(TEST)
5 V
12.5 V
REG/
MEM
Address
(A15-A0)
R/W
Mode
5 V
0
0
0000H
0000H
1
0
EPROM read
EPROM program
12.5 V
12.5 V
0
1
0000H
0E3FH
1
0
EPROM verify
EPROM read protection
NOTE
:
"0" means Low level; "1" means High level.
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