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參數(shù)資料
| 型號： | KS57P21832 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMOS technology provides for low power consumption and a wide operating voltage range. |
| 中文描述： | CMOS技術(shù)提供了低功耗和寬工作電壓范圍。 |
| 文件頁數(shù)： | 19/34頁 |
| 文件大?。?/td> | 274K |
| 代理商： | KS57P21832 |
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KS57C21832/P21832
ELECTRICAL DATA
14-7
Table 14-5. Subsystem Clock Oscillator Characteristics
(T
A
= - 40
°
C + 85
°
C, V
DD
= 1.8 V to 5.5 V)
Oscillator
Clock
Configuration
Parameter
Test Condition
Min
Typ
Max
Units
Crystal
Oscillator
XT
IN
C1
C2
XT
OUT
Oscillation
frequency
(1)
–
32
32.768
35
kHz
Stabilization time
(2)
V
DD
= 2.7 V to 5.5 V
V
DD
= 2.0 V to 5.5 V
–
–
1.0
2
s
–
–
10
External
Clock
XT
IN
XT
OUT
XT
IN
input
frequency
(1)
32
–
100
kHz
XT
IN
input high and
low level width
(t
XTL,
t
XTH
)
–
5
–
15
μs
NOTES:
1.
2.
Oscillation frequency and XT
IN
input frequency data are for oscillator characteristics only.
Stabilization time is the interval required for oscillating stabilization after a power-on occurs.
Table 14-6. Input/Output Capacitance
(T
A
= 25
°
C, V
DD
=
0 V )
Parameter
Input
Capacitance
Symbol
C
IN
Condition
Min
–
Typ
–
Max
15
Units
pF
f = 1 MHz; Unmeasured pins
are returned to V
SS
Output
Capacitance
I/O Capacitance
C
OUT
–
–
15
pF
C
IO
–
–
15
pF
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