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| 型號： | KM4232W259A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CMOS Window RAM（1M Byte Dual Ported DRAM Array）(CMOS視窗RAM（1M字節(jié)的雙口動態(tài)RAM陣列）) |
| 中文描述： | 窗口的CMOS內(nèi)存（1M字節(jié)雙端口內(nèi)存陣列）（視窗的CMOS存儲器（100萬字節(jié)的雙口動態(tài)內(nèi)存陣列）） |
| 文件頁數(shù)： | 7/46頁 |
| 文件大小： | 836K |
| 代理商： | KM4232W259A |
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KM4232W259A
CMOS WINDOW RAM
Rev.0 (August 1997)
ABSOLUTE MAXIMUM RATINGS*
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating con-
ditions for extended periods may affect device reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 to +7.0
V
Voltage on V
CC
supply relative to Vss
V
CC
-1.0 to +7.0
V
Storage temperature
T
STG
-55 to +150
°
C
Power dissipation
P
D
1.2
W
Short circuit output current
I
OS
50
mA
DC OPERATING CONDITIONS
(Voltage reference to V
SS
, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Votlage
V
IH
2.4
-
6.5
V
Input Low Voltage
V
IL
-1.0
-
0.8
V
DC OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
* Real values are dependent on output loading and cycle rates. Specified values are obtained with the output open(SE=OE=V
IH
). I
DD
is specified average current ; In I
DD
1, I
DD
3, address transition once while RAS=V
IL
. In the I
DD
5, I
DD
6, I
DD
7 address transition should
be changed only once while CAS=V
IH
. SAM standby condition ; SE
≥
V
IH
, SC
≤
V
IL
or
≥
V
IH
.
Parameter(RAM Port)
SAM Port
Symbol
Speed
Unit
-50
-60
Operating Current*
(RAS and CAS Cycling at
t
RC
=min)
Standby
I
DD
1
180
160
mA
Active
I
DD
1A
210
190
mA
Standby Current
(RAS =V
IH
, CAS =V
IH
), DSF 0 ~ 2=V
IL
Standby
I
DD
2
10
10
mA
Active
I
DD
2A
50
45
mA
RAS Only Refresh Current*
(CAS =V
IH
, RAS Cycling at
t
RC
=min)
Standby
I
DD
3
180
160
mA
Active
I
DD
3A
210
190
mA
CAS -Before-RAS Refresh Current*
(RAS and CAS Cycling at
t
RC
=min)
Standby
I
DD
4
180
160
mA
Active
I
DD
4A
210
190
mA
Ultra Fast Page Mode Current
(LCR, LMR, RCR, RMR, UFR and UFW Cycles)*
(RAS =V
IL
, CAS Cycling at
t
UPC
=min)
Standby
I
DD
5
190
170
mA
Active
I
DD
5A
220
200
mA
Ultra Fast Page Mode Current*
(UFBWL and UFBW8 Cycles)
(RAS =V
IL
, CAS Cycling at
t
UPC
=min)
Standby
I
DD
6
220
200
mA
Active
I
DD
6A
240
220
mA
Ultra Fast Page Mode Current*
(UFBR, SRT and SRTR Cycles)
(RAS =V
IL
, CAS Cycling at
t
UPC
=min)
Standby
I
DD
7
220
200
mA
Active
I
DD
7A
240
220
mA
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