參數(shù)資料
型號: KM418RD32D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述: 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁數(shù): 5/64頁
文件大?。?/td> 4052K
代理商: KM418RD32D
Page 2
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Pinouts and Definitions
Normal Package
This table shows the pin assignments of the normal RDRAM package.
Mirrored Package
This table shows the pin assignments of the mirrored RDRAM package.
Table 1 : a. Center-Bonded Device
(Top View For Normal Package)
12
GND
VDD
VDD
GND
11
10
DQA7
DQA4
CFM
CFMN
RQ5
RQ3
DQB0
DQB4
DQB7
9
GND
VDD
GND
GNDa
VDD
GND
VDD
VDD
GND
8
CMD
DQA5
DQA2
VDDa
RQ6
RQ2
DQB1
DQB5
SIO1
7
6
5
SCK
DQA6
DQA1
VREF
RQ7
RQ1
DQB2
DQB6
SIO0
4
VCMOS
GND
VDD
GND
GND
VDD
GND
GND
VCMOS
3
DQA8
*
DQA3
DQA0
CTMN
CTM
RQ4
RQ0
DQB3
DQB8
*
2
1
GND
VDD
VDD
GND
A
B
C
D
E
F
G
H
J
Table 2: a.Center-Bonded Device
(Top View For Mirrored Package)
12
GND
VDD
VDD
GND
11
10
DQA8
*
DQA3
DQA0
CTMN
CTM
RQ4
RQ0
DQB3
DQB8
*
9
VCMOS
GND
VDD
GND
GND
VDD
GND
GND
VCMOS
8
SCK
DQA6
DQA1
VREF
RQ7
RQ1
DQB2
DQB6
SIO0
7
6
5
CMD
DQA5
DQA2
VDDa
RQ6
RQ2
DQB1
DQB5
SIO1
4
GND
VDD
GND
GNDa
VDD
GND
VDD
VDD
GND
3
DQA7
DQA4
CFM
CFMN
RQ5
RQ3
DQB0
DQB4
DQB7
2
1
GND
VDD
VDD
GND
A
B
C
D
E
F
G
H
J
For mirrored package, pin #1(ROW 1, COL A)
is located at the A1 postion on the top side and
the A1 position is marked by the alphabet
M
.
Chip
Top View
* DQA8/DQB8 are just used for
144Mb RDRAM. These two pins are
NC(No Connection) in 128Mb RDRAM.
b.
Top marking
example of normal package
For normal package, pin #1(ROW 1, COL A) is
located at the A1 position on the top side and
the A1 position is marked by the marker
.
b. Top marking example
of mirrored package
COL
ROW
COL
ROW
SEC KOREA
KM4
xx
RD8AC
M
SEC KOREA
KM4
xx
RD8AD
相關(guān)PDF資料
PDF描述
KM418RD4AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4D 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM418RD4AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4AD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD8AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM