參數(shù)資料
型號： KM418RD32D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述： 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁數(shù)： 22/64頁
文件大?。?/td> 4052K
代理商： KM418RD32D
Page 19
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Figure 14: Offsets for Alternate Precharge Mechanisms
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
RD a1
ACT a0
RD a2
Q (a2)
Q (a1)
ACT b0
MSK (a2)
MSK (a1)
retire (a1)
t
OFFP
WR a1
D (a2)
D (a1)
ACT b0
ACT a0
Transaction a: RD
a0 = {Da,Ba,Ra}
a5 = {Da,Ba}
COLC Packet: RDA Precharge Offset
COLC Packet: WDA Precharge Offset
Transaction a: WR
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
a5 = {Da,Ba}
COLX Packet: PREX Precharge Offset
RD a3
Q (a4)
Q (a3)
RDA a4
PRER a5
The RDA precharge is equivalent to a PRER command here
t
OFFP
PRER a5
The WRA precharge (triggered by the automatic retire) is equivalent to a PRER command here
WRA a2
retire (a2)
t
RTR
a3 = {Da,Ba,Ca3}
a4 = {Da,Ba,Ca4}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
RD a1
ACT a0
RD a2
Q (a2)
Q (a1)
ACT b0
t
OFFP
Transaction a: RD
a0 = {Da,Ba,Ra}
a5 = {Da,Ba}
RD a3
Q (a4)
Q (a3)
PRER a5
The PREX precharge command is equivalent to a PRER command here
a3 = {Da,Ba,Ca3}
a4 = {Da,Ba,Ca4}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
RD a4
PREX a5
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PDF描述
KM418RD4AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM418RD4AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4AD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD4D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD8AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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