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參數(shù)資料
| 型號： | KM29N16000ATS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲器) |
| 中文描述： | 200萬× 8位NAND閃存（2米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 7/21頁 |
| 文件大?。?/td> | 252K |
| 代理商： | KM29N16000ATS |
KM29N16000ATS
FLASH MEMORY
7
AC TEST CONDITION
(T
A
=0 to +70
°
C, V
CC
=5V
±
10%, unless otherwise noted.)
Parameter
Value
Input Pulse Levels
0.4V to 2.6V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load
1 TTL GATE and CL=100pF
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
0.25
1.5
ms
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
2
10
ms
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(3clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(3clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Sequential Read & Data Output
L
L
L
H
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
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