參數(shù)資料
型號(hào): KM29N16000ATS
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器)
中文描述: 200萬(wàn)× 8位NAND閃存(2米× 8位的NAND閃速存儲(chǔ)器)
文件頁(yè)數(shù): 16/21頁(yè)
文件大?。?/td> 252K
代理商: KM29N16000ATS
KM29N16000ATS
FLASH MEMORY
16
Figure 5. Sequential Row Read1 Operation
Figure 4. Read2 Operation
50H
Busy(Seek Time)
A
0
~ A
2
& A
8
~ A
20
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Data Field
Spare Field
Data Field
Spare Field
00H
A
0
~ A
7
& A
8
~ A
20
I/O
0
~
7
R/B
Start Add.(3Cycle)
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(264 Byte)
(264 Byte)
(A
3
~ A
7
:
Don't Care)
1st
2nd
Nth
I/O
0 ~ 7
RE
Seek Time
t
R
t
R
t
R
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