參數(shù)資料
型號(hào)： K8S1215EZC-SC1C0
元件分類(lèi)： PROM
英文描述： 32M X 16 FLASH 1.8V PROM, 100 ns, PBGA64
封裝： 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
文件頁(yè)數(shù)： 18/83頁(yè)
文件大?。?/td> 1511K
代理商： K8S1215EZC-SC1C0
- 25 -
K8S1215E(T/B/Z)C
datasheet NOR FLASH MEMORY
Rev. 1.1
12.0 Common Flash Memory Interface
Common Flash Memory Interface is contrived to increase the compatibility of host system software. It provides the specific information of the device, such
as memory size and electrical features. Once this information has been obtained, the system software will know which command sets to use to enable
flash writes, block erases, and control the flash component.
When the system writes the CFI command(98H) to address 55H, the device enters the CFI mode. And then if the system writes the address shown in
Table 16, the system can read the CFI data. Query data are always presented on the lowest-order data outputs(DQ0-7) only. In word(x16) mode, the
upper data outputs(DQ8-15) is 00h. To terminate this operation, the system must write the reset command.
[Table 16] Common Flash Memory Interface Code
Description
Addresses
(Word Mode)
Data
Query Unique ASCII string "QRY"
10H
11H
12H
0051H
0052H
0059H
Primary OEM Command Set
13H
14H
0002H
0000H
Address for Primary Extended Table
15H
16H
0040H
0000H
Alternate OEM Command Set (00h = none exists)
17H
18H
0000H
Address for Alternate OEM Extended Table (00h = none exists)
19H
1AH
0000H
Vcc Min. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1BH
0017H
Vcc Max. (write/erase)
D7-D4: volt, D3-D0: 100 millivolt
1CH
0019H
Vpp (Acceleration Program) Supply Minimum
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV
1DH
0085H
Vpp (Acceleration Program) Supply Maximum
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV
1EH
0095H
Typical timeout per single word write 2N us
1FH
0007H
Typical timeout for Max buffer write 2N us(00H = not supported)
20H
000AH
Typical timeout per individual block erase 2N ms
21H
000AH
Typical timeout for full chip erase 2N ms(00H = not supported)
22H
0013H
Max. timeout for word write 2N times typical
23H
0003H
Max. timeout for buffer write 2N times typical
24H
0003H
Max. timeout per individual block erase 2N times typical
25H
0003H
Max. timeout for full chip erase 2N times typical(00H = not supported)
26H
0003H
Device Size = 2N byte
27H
001AH
Flash Device Interface description
28H
29H
0000H
Max. number of byte in multi-byte write = 2N
2AH
2BH
000AH
0000H
Number of Erase Block Regions within device1)
2CH
0002H
Erase Block Region 1 Information (Boot block part : (K8S(10/11/12/13)ET(B)C) )
Bits 0~15: y+1=block number
Bits 16~31: block size= z x 256bytes
2DH
2EH
2FH
30H
0003H
0000H
0080H
0000H
相關(guān)PDF資料
PDF描述
K8S5515ETC-SC1E0 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44
K9E2G08U0M-YIB00 256M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
KA-59-281 TNC CONNECTOR, PLUG
KA-91-02 RF STRAIGHT ADAPTER
KA-91-16 RF TEE ADAPTER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K8S2815ETE 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Mb E-die NOR FLASH
K8S5615ETC 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb C-die NOR Flash
K8S6415EBB-DC7C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
K8S6415EBB-DE7C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
K8S6415EBB-FC7C 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*