參數(shù)資料
型號: K7I643684M-FC20
元件分類: SRAM
英文描述: 2M X 36 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1 MM PITCH, FBGA-165
文件頁數(shù): 5/18頁
文件大?。?/td> 190K
代理商: K7I643684M-FC20
2Mx36 & 4Mx18 & 8Mx8 DDRII CIO b4 SRAM
- 13 -
Rev 0.1
Mar. 2003
K7I643684M
K7I641884M
K7I640884M
Preliminary
APPLICATION INRORMATION
THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. TJ=TA + PD x
θJA
PRMETER
SYMBOL
TYP
Unit
NOTES
Junction to Ambient
θJA
TBD
°C/W
Junction to Case
θJC
TBD
°C/W
Junction to Pins
θJB
TBD
°C/W
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250
and V DDQ=1.5V.
2. Periodically sampled and not 100% tested.
PRMETER
SYMBOL
TESTCONDITION
Typ
MAX
Unit
NOTES
Address Control Input Capacitance
CIN
VIN=0V
4
5
pF
Input and Output Capacitance
COUT
VOUT=0V
6
7
pF
Clock Capacitance
CCLK
-
5
6
pF
2Mx18
SRAM#1
SA R/W
BW0
DQ0-17
ZQ
K
C C
SRAM#4
R
Vt
R=50
Vt=VREF
Vt
R
R=250
R=250
BW1
K
SA R/W LD3BW0
DQ0-17
ZQ
K
C C
BW1
K
DQ
Address
R/ W
LD0-3
BW0-7
Return CLK
Source CLK
Return CLK
Source CLK
MEMORY
CONTROLLER
LD0
相關(guān)PDF資料
PDF描述
K8S1215EZC-SC1C0 32M X 16 FLASH 1.8V PROM, 100 ns, PBGA64
K8S5515ETC-SC1E0 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44
K9E2G08U0M-YIB00 256M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
KA-59-281 TNC CONNECTOR, PLUG
KA-91-02 RF STRAIGHT ADAPTER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7I643684M-FC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb DDRII SRAM Specification
K7I643684M-FC30 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb DDRII SRAM Specification
K7I643684M-FCI16 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb DDRII SRAM Specification
K7I643684M-FCI20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb DDRII SRAM Specification
K7I643684M-FECI25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:72Mb DDRII SRAM Specification