參數(shù)資料
型號(hào)： IXFN180N15P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHT HiPerFET Power MOSFET
中文描述： 150 A, 150 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, MINIBLOC-4
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 156K
代理商： IXFN180N15P
2006 IXYS All rights reserved
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS,
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 150
°
C
500
R
DS(on)
V
GS
= 10 V, I
D
= 90 A
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
11
m
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
150
150
V
V
V
DSS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
D(RMS)
I
DM
T
C
= 25
°
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
150
A
100
A
380
A
I
AR
60
A
E
AR
E
AS
100
mJ
4
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
680
W
T
J
T
JM
T
stg
M
d
-55 ... +175
°
C
°
C
°
C
175
-55 ... +150
1.5/13
1.5/13
Mounting torque
Terminal connection torque (M4)
50/60 Hz
I
ISOL
≤
1 mA
Nm/lb.in.
Nm/lb.in.
V
ISOL
t = 1 min
t = 1 s
2500
3000
V~
V~
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Weight
30 g
DS99241E(01/06)
PolarHT
TM
HiPerFET
Power MOSFET
IXFN 180N15P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V
DSS
= 150 V
I
D25
= 150 A
R
DS(on)
≤
11 m
t
rr
≤
200 ns
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
International standard package
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
l
Fast recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
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