參數(shù)資料
型號(hào)： IXFN21N100Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.50Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述： 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, MINIBLOC-4
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 41K
代理商： IXFN21N100Q
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
21
A
A
A
84
21
E
AR
E
AS
T
C
= 25
°
C
60
mJ
2.5
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
C
= 25
°
C
520
W
T
J
T
JM
T
stg
V
ISOL
-55 to +150
150
-55 to +150
°
C
°
C
°
C
V~
V~
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
2500
3000
M
d
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1.5 mA
1000
2.5
V
V
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
100
μ
A
mA
T
J
= 125
°
C
2
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.50
HiPerFET
TM
Power MOSFETs
Q-Class
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
V
DSS
I
D25
R
DS(on)
= 0.50
W
t
rr
￡
250 ns
= 1000 V
= 21 A
IXFN 21N100Q
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
-faster switching
Unclamped Inductive Switching (UIS)
rated
Low R
DS (on)
Fast intrinsic diode
International standard package
miniBLOC
with Aluminium nitride
isolation for low thermal resistance
Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
Molding epoxies meet UL 94 V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Preliminary data sheet
98762 (10/00)
相關(guān)PDF資料
PDF描述
IXFN230N10 Power MOSFETs Single Die MOSFET
IXFN24N100 HiPerRF Power MOSFETs
IXFN24N100F HiPerRF Power MOSFETs
IXFN25N80 HiPerFETTM Power MOSFETs
IXFN27N80 HiPerFETTM Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IXFN230N10 功能描述:MOSFET 230 Amps 100V 0.006 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN230N10_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Power MOSFET Single Die MOSFET
IXFN230N20T 功能描述:MOSFET 230A 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN23N100 功能描述:MOSFET 23 Amps 1000V 0.43 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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