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參數(shù)資料
| 型號(hào)： | IXFN21N100Q |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.50Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, MINIBLOC-4 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | IXFN21N100Q |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
16
22
S
C
iss
C
oss
C
rss
5900
550
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
90
t
d(on)
t
r
18
t
d(off)
t
f
21
18
60
12
ns
ns
ns
ns
V
GS
R
G
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
= 1
(External)
Q
g(on)
Q
gs
Q
gd
170
38
75
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.24
K/W
K/W
0.05
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
21
A
I
SM
Repetitive; pulse width limited by T
JM
84
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
Q
RM
I
RM
250
ns
μ
C
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
1.4
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Min.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
Inches
Max.
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
Min.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
IXFN 21N100Q
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| IXFN23N100 | 功能描述:MOSFET 23 Amps 1000V 0.43 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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