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參數(shù)資料
| 型號： | IXFN180N20 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻10mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 180 A, 200 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 71K |
| 代理商： | IXFN180N20 |
1 - 2
2000 IXYS All rights reserved
Features
International standard packages
miniBLOC,
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
D25
Pulse test, t 300 s,
duty cycle d
200
V
V
2
4
200
nA
T
J
= 25 C
T
J
= 125 C
100
A
2
mA
R
DS(on)
10
m
2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
200
200
V
V
20
30
V
V
T
C
= 25 C, Chip capability
Terminal current limit
180
A
100
A
I
DM
I
AR
E
AR
E
AS
dv/dt
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
720
36
A
A
64
mJ
4
J
5
V/ns
P
D
T
J
T
JM
T
stg
V
ISOL
700
W
-55 ... +150
C
C
C
150
-55 ... +150
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
98551B (7/00)
D
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 180N20
V
DSS
I
D25
R
DS(on)
= 10 m
t
rr
< 250 ns
= 200 V
= 180 A
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFN180N20 | 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B 制造商:IXYS Corporation 功能描述:MOSFET, N, SOT-227B 制造商:IXYS Corporation 功能描述:MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:200V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:700W ;RoHS Compliant: Yes |
| IXFN180N25T | 功能描述:MOSFET 155A 250V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN185N10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 185A I(D) |
| IXFN200N06 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFN200N07 | 功能描述:MOSFET 70V 200A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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