參數(shù)資料
型號: IXFK55N50
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: HiPerFET Power MOSFET
中文描述: 55 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264AA, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 121K
代理商: IXFK55N50
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9.
Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
Gate Charge - nC
0
50
100
150
200
250
300
350
V
G
0
2
4
6
8
10
12
V
DS
= 250V
I
D
= 27.5A
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
100
1000
10000
Crss
Coss
Ciss
f = 1MHz
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
I
D
0
20
40
60
80
100
T
J
= 125
O
C
T
J
= 25
O
C
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R
J
0.00
0.01
0.10
1.00
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