參數(shù)資料
型號(hào)： IXFK50N50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： CAP 0.18UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
中文描述： 50 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264AA, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 121K
代理商： IXFK50N50
2002 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
TO-264 AA (IXFK)
Features
International standard packages
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
S
G
D
D (TAB)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
Min.
Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20V; V
DS
= 0V
2.5
4.5
V
I
GSS
±
200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
55N50 80 m
50N50
25
2
μ
A
mA
R
DS(on)
V
= 10 V, I
D
= 0.5 I
D25
Note 1
100 m
97502F (04/02)
HiPerFET
TM
Power MOSFET
Single Die MOSFET
Symbol
Test Conditions
Maximum Ratings
IXFK
50N50 55N50 50N50
IXFK
55N50
IXFN IXFN
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
500
500
500 V
500 V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C 55 50 55 50 A
T
C
=25
°
C,
220 200 220 200 A
T
C
= 25
°
C 55 50 55 50 A
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5 5
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
560
E
AR
60
60
mJ
dv/dt
I
S
V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
N/A
°
C
V
ISOL
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
N/A
N/A
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
V
DSS
I
D25
R
DS(on)
t
rr
IXFN 55N50
IXFN 50N50
IXFK 55N50
IXFK 50N50
500V
500V
500V
500V
55A
50A
55A
50A
80m
250ns
100m
250ns
80m
250ns
100m
250ns
Preliminary data sheet
相關(guān)PDF資料
PDF描述
IXFK60N55Q2 HiPerFET Power MOSFETs Q-Class
IXFX60N55Q2 HiPerFET Power MOSFETs Q-Class
IXFK72N20 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻35mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFK80N20 RESN_0603LF-10M, 5%, 0603LF
IXFK73N30Q HiPerFET Power MOSFETs Q-CLASS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFK520N075T2 功能描述:MOSFET TRENCHT2 PWR MOSFET 75V 520A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK52N30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 52A I(D) | TO-264AA
IXFK52N30Q 功能描述:MOSFET 52 Amps 300V 0.06 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK52N60Q2 功能描述:MOSFET 52 Amps 600V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK52N60Q2_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class
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