參數(shù)資料
型號: IXFK50N50
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: CAP 0.18UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
中文描述: 50 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264AA, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 121K
代理商: IXFK50N50
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9.
Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
Gate Charge - nC
0
50
100
150
200
250
300
350
V
G
0
2
4
6
8
10
12
V
DS
= 250V
I
D
= 27.5A
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
100
1000
10000
Crss
Coss
Ciss
f = 1MHz
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
I
D
0
20
40
60
80
100
T
J
= 125
O
C
T
J
= 25
O
C
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R
J
0.00
0.01
0.10
1.00
相關(guān)PDF資料
PDF描述
IXFK60N55Q2 HiPerFET Power MOSFETs Q-Class
IXFX60N55Q2 HiPerFET Power MOSFETs Q-Class
IXFK72N20 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻35mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFK80N20 RESN_0603LF-10M, 5%, 0603LF
IXFK73N30Q HiPerFET Power MOSFETs Q-CLASS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFK520N075T2 功能描述:MOSFET TRENCHT2 PWR MOSFET 75V 520A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK52N30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 52A I(D) | TO-264AA
IXFK52N30Q 功能描述:MOSFET 52 Amps 300V 0.06 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK52N60Q2 功能描述:MOSFET 52 Amps 600V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK52N60Q2_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class