- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383192 > IXFK72N20 (IXYS CORP) N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導通電阻35mΩ的N溝道增強型HiPerFET功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | IXFK72N20 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導通電阻35mΩ的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 72 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 100K |
| 代理商： | IXFK72N20 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
200
200
V
V
20
30
V
V
T
C
= 25 C
72N20
80N20
72N20
80N20
72
80
288
320
74
A
A
A
A
A
I
DM
T
= 25 C,
pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
I
AR
E
AR
dv/dt
45
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
360
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s 300 -
C
Mounting torque
0.9/6
Nm/lb.in.
Weight
10
g
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
International standard packages
Molding epoxies meet UL
94
V-0
flammability classification
Low R
HDMOS
TM
process
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
V
DSS
200 V
200 V
t
rr
I
D25
72 A 35 m
80 A 30 m
200 ns
R
DS(on)
IXFK72N20
IXFK80N20
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V,I
D
= 0.5 I
D25
200
V
V
2
4
100
nA
T
J
= 25 C
T
J
= 125 C
72N20
80N20
200
A
1
mA
R
DS(on)
35
30
m
m
Pulse test, t 300 s, duty cycle d 2 %
97523C (07/00)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
TO-264 AA
(TAB)
HiPerFET
TM
Power MOSFETs
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料 |
PDF描述 |
|---|---|
| IXFK80N20 | RESN_0603LF-10M, 5%, 0603LF |
| IXFK73N30Q | HiPerFET Power MOSFETs Q-CLASS |
| IXFX73N30Q | HiPerFET Power MOSFETs Q-CLASS |
| IXFK73N30 | HiPerFET Power MOSFETs |
| IXFN73N30 | HiPerFET Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXFK72N20S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 72A I(D) | TO-264SMD |
| IXFK73N30 | 功能描述:MOSFET 300V 73A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK73N30 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-264 |
| IXFK73N30Q | 功能描述:MOSFET 73 Amps 300V 0.042 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK74N50P2 | 功能描述:MOSFET PolarP2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。