參數(shù)資料
型號： IXFK73N30
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 73 A, 300 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264
封裝： TO-264, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 131K
代理商： IXFK73N30
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 M
300
300
V
300
300
V
Continuous
±20
±20
V
Transient
±30
±30
V
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
73
73
A
292
292
A
40
40
A
T
C
= 25°C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2 W
30
30
mJ
I
S
5
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
T
C
= 25°C
500
520
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6 mm (0.063 in) from case for 10 s
300
-
°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
-
-
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
0.9/6
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
-
Weight
10
30
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
International standard packages
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast ntrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
300
V
2
4
V
V
GS
= ±20 V
DC
, V
DS
= 0
±200
nA
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
400
uA
mA
2
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
45
m
TO-264 AA (IXFK)
S
G
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
92805J (11/01)
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
V
DSS
300 V
300 V
t
rr
≤
200 ns
I
D25
73 A
73 A
R
DS(on)
45 m
45 m
IXFK 73 N 30
IXFN 73 N 30
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFK73N30 制造商:IXYS Corporation 功能描述:MOSFET N TO-264
IXFK73N30Q 功能描述:MOSFET 73 Amps 300V 0.042 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK74N50P2 功能描述:MOSFET PolarP2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK78N50P3 功能描述:MOSFET 500V 78A 0.068Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK80N10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-264AA
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