參數(shù)資料
型號(hào)： IXFX90N30
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 90 A, 300 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLUS247, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 125K
代理商： IXFX90N30
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
300
300
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
D104
I
DM
I
AR
T
C
= 25
°
C (MOSFET chip capability)
T
C
= 104
°
C (External lead capability)
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
90
75
A
A
A
A
360
90
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
64
mJ
3
J
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
560
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
10
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
300
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20 V, V
DS
= 0
2.0
4.0 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
2 mA
33 m
R
DS(on)
Single MOSFET Die
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98537A (12/01)
PLUS 247
TM
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFX 90N30
IXFK 90N30
V
DSS
I
D25
R
DS(on)
=
= 300
=
V
A
90
33 m
t
rr
≤
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
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