參數(shù)資料
型號： IXFN55N50F
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerRF Power MOSFETs
中文描述： 55 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/4頁
文件大?。?/td> 121K
代理商： IXFN55N50F
2002 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
TO-264 AA (IXFK)
Features
International standard packages
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
S
G
D
D (TAB)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
Min.
Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20V; V
DS
= 0V
2.5
4.5
V
I
GSS
±
200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
55N50 80 m
50N50
25
2
μ
A
mA
R
DS(on)
V
= 10 V, I
D
= 0.5 I
D25
Note 1
100 m
97502F (04/02)
HiPerFET
TM
Power MOSFET
Single Die MOSFET
Symbol
Test Conditions
Maximum Ratings
IXFK
50N50 55N50 50N50
IXFK
55N50
IXFN IXFN
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
500
500
500 V
500 V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C 55 50 55 50 A
T
C
=25
°
C,
220 200 220 200 A
T
C
= 25
°
C 55 50 55 50 A
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5 5
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
560
E
AR
60
60
mJ
dv/dt
I
S
V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
N/A
°
C
V
ISOL
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
N/A
N/A
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
V
DSS
I
D25
R
DS(on)
t
rr
IXFN 55N50
IXFN 50N50
IXFK 55N50
IXFK 50N50
500V
500V
500V
500V
55A
50A
55A
50A
80m
250ns
100m
250ns
80m
250ns
100m
250ns
Preliminary data sheet
相關(guān)PDF資料
PDF描述
IXFN50N25 HIPERFET Power MOSFTETs
IXFK50N50 CAP 0.18UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
IXFK60N55Q2 HiPerFET Power MOSFETs Q-Class
IXFX60N55Q2 HiPerFET Power MOSFETs Q-Class
IXFK72N20 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻35mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN56N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN56N90P_11 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Polar HiPerFET Power MOSFET
IXFN58N50 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Current Power MOSFET
IXFN60N60 功能描述:MOSFET 600V 60A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN60N80P 功能描述:MOSFET DIODE Id54 BVdass800 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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