參數(shù)資料
型號： IXFN50N25
廠商： IXYS Corporation
英文描述： HIPERFET Power MOSFTETs
中文描述： HIPERFET電力MOSFTETs
文件頁數(shù)： 1/4頁
文件大?。?/td> 121K
代理商： IXFN50N25
2002 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
TO-264 AA (IXFK)
Features
International standard packages
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
S
G
D
D (TAB)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
Min.
Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20V; V
DS
= 0V
2.5
4.5
V
I
GSS
±
200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
55N50 80 m
50N50
25
2
μ
A
mA
R
DS(on)
V
= 10 V, I
D
= 0.5 I
D25
Note 1
100 m
97502F (04/02)
HiPerFET
TM
Power MOSFET
Single Die MOSFET
Symbol
Test Conditions
Maximum Ratings
IXFK
50N50 55N50 50N50
IXFK
55N50
IXFN IXFN
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
500
500
500 V
500 V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C 55 50 55 50 A
T
C
=25
°
C,
220 200 220 200 A
T
C
= 25
°
C 55 50 55 50 A
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5 5
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
560
E
AR
60
60
mJ
dv/dt
I
S
V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
N/A
°
C
V
ISOL
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
N/A
N/A
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
V
DSS
I
D25
R
DS(on)
t
rr
IXFN 55N50
IXFN 50N50
IXFK 55N50
IXFK 50N50
500V
500V
500V
500V
55A
50A
55A
50A
80m
250ns
100m
250ns
80m
250ns
100m
250ns
Preliminary data sheet
相關(guān)PDF資料
PDF描述
IXFK50N50 CAP 0.18UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
IXFK60N55Q2 HiPerFET Power MOSFETs Q-Class
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN50N50 功能描述:MOSFET 50 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN50N80Q2 功能描述:MOSFET 50 Amps 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN520N075T2 功能描述:功率驅(qū)動器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IXFN52N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN55N50 功能描述:MOSFET 55 Amps 500V 0.08 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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