參數(shù)資料
型號： IXFN50N50
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFET
中文描述： 50 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/4頁
文件大?。?/td> 121K
代理商： IXFN50N50
2002 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
TO-264 AA (IXFK)
Features
International standard packages
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
S
G
D
D (TAB)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
Min.
Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20V; V
DS
= 0V
2.5
4.5
V
I
GSS
±
200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
55N50 80 m
50N50
25
2
μ
A
mA
R
DS(on)
V
= 10 V, I
D
= 0.5 I
D25
Note 1
100 m
97502F (04/02)
HiPerFET
TM
Power MOSFET
Single Die MOSFET
Symbol
Test Conditions
Maximum Ratings
IXFK
50N50 55N50 50N50
IXFK
55N50
IXFN IXFN
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
500
500
500 V
500 V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C 55 50 55 50 A
T
C
=25
°
C,
220 200 220 200 A
T
C
= 25
°
C 55 50 55 50 A
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5 5
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
560
E
AR
60
60
mJ
dv/dt
I
S
V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
N/A
°
C
V
ISOL
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
N/A
N/A
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
V
DSS
I
D25
R
DS(on)
t
rr
IXFN 55N50
IXFN 50N50
IXFK 55N50
IXFK 50N50
500V
500V
500V
500V
55A
50A
55A
50A
80m
250ns
100m
250ns
80m
250ns
100m
250ns
Preliminary data sheet
相關PDF資料
PDF描述
IXFN55N50 HiPerFET Power MOSFET
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IXFN50N25 HIPERFET Power MOSFTETs
IXFK50N50 CAP 0.18UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
IXFK60N55Q2 HiPerFET Power MOSFETs Q-Class
相關代理商/技術參數(shù)
參數(shù)描述
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