參數(shù)資料
型號(hào)： IRG4BC30K
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
中文描述： 絕緣門雙極晶體管（IGBTs）（短路額定超快速絕緣柵型雙極型晶體管）
文件頁(yè)數(shù)： 8/8頁(yè)
文件大?。?/td> 137K
代理商： IRG4BC30K
IRG4BC30K
8
www.irf.com
0.55 (.022)
0.46 (.018)
3 X
2.92 (.115)
2.64 (.104)
1.32 (.052)
1.22 (.048)
- B -
4.69 (.185)
4.20 (.165)
3.78 (.149)
3.54 (.139)
- A -
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3 X
3.96 (.160)
3.55 (.140)
3 X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
3 X
2.54 (.100)
2X
1 2 3
4
CONFORMS TO JEDEC OUTLINE TO-220AB
D imensions in M illimeters and (Inches)
LEAD ASSIGNMENTS
1 - GATE
2 - COLLE CTOR
3 - EMITTER
4 - COLLE CTOR
NOTES:
1 DIMENSIONS & TOLER ANCING
PER ANSI Y14.5M, 1982.
2 CONTR OLLIN G DIMENSION : IN CH.
3 DIMENSIONS ARE SHOW N
MILLIMETERS (INCHES ).
4 CONFORMS TO JEDEC OU TLINE
TO-220AB.
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 23
,
(See fig. 13a)
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
相關(guān)PDF資料
PDF描述
IRG4BC30S-SPBF LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 271; Grade: -3; Package: Lead-Free ftBGA; Pins: 324; Temp.: AUTO
IRG4BC30S INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
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IRG4BC30UDPBF General-Purpose Power-Supply Monitor and Sequence Controller; 48-TQFP
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4BC30KD 制造商:International Rectifier 功能描述:IGBT TO-220
IRG4BC30KDPBF 功能描述:IGBT 晶體管 600V UltraFast 8-25kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4BC30KDS 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRG4BC30KD-S 制造商:International Rectifier 功能描述:IGBT D2-PAK
IRG4BC30KD-SHR 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 28A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN D2PAK - Rail/Tube
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