- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377516 > IRG4BC30K (International Rectifier) Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) PDF資料下載
參數(shù)資料
| 型號： | IRG4BC30K |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（短路額定超快速絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 137K |
| 代理商： | IRG4BC30K |
4/24/2000
V
CES
= 600V
V
CE(on) typ.
=
2.21V
@V
GE
= 15V, I
C
= 16A
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
28
16
58
58
10
±20
260
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Short Circuit Rated
UltraFast IGBT
Parameter
Typ.
–––
0.5
–––
1.44
Max.
1.2
–––
80
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°
C/W
g
Thermal Resistance
E
C
G
n-channel
TO-220AB
Features
High short circuit rating optimized for motor control,
t
sc
=10μs, @360V V
CE
(start), T
J
= 125
°
C,
V
GE
= 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGBC30K and IRGBC30M
devices
Benefits
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4BC30S-SPBF | LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 271; Grade: -3; Package: Lead-Free ftBGA; Pins: 324; Temp.: AUTO |
| IRG4BC30S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) |
| IRG4BC30U-SPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC30UDPBF | General-Purpose Power-Supply Monitor and Sequence Controller; 48-TQFP |
| IRG4BC30U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC30KD | 制造商:International Rectifier 功能描述:IGBT TO-220 |
| IRG4BC30KDPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-25kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC30KDS | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |
| IRG4BC30KD-S | 制造商:International Rectifier 功能描述:IGBT D2-PAK |
| IRG4BC30KD-SHR | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 28A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 28A 3PIN D2PAK - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。