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參數(shù)資料
| 型號： | IRF742FI |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 4.5AI（四）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 149K |
| 代理商： | IRF742FI |
N-Ch P-Ch
V
DSS
55V
-55V
R
DS(on)
0.050
0.105
PRELIMINARY
HEXFET
Power MOSFET
PD - 9.1709
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
10/29/97
SO-8
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
IRF7343
Description
D1
N -C H AN N EL M OSF ET
1
P-C H ANN EL MO SFE T
D1
D2
D2
G 1
S2
G 2
S1
Top View
8
2
3
4
5
6
7
Max.
N-Channel
55
4.7
3.8
38
P-Channel
-55
-3.4
-2.7
-27
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
E
AR
V
GS
dv/dt
T
J,
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
2.0
1.3
W
W
mJ
A
mJ
V
V/ns
°C
72
4.7
114
-3.4
0.20
± 20
5.0
-5.0
-55 to + 150
Parameter
A
Absolute Maximum Ratings
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7343 | Dual N and P Channel MOSFET(雙 N溝道 和P溝道 MOS場效應(yīng)管) |
| IRF750A | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 15A I(D) | TO-220AB |
| IRF7756 | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 4.3A I(D) | TSOP |
| IRF7809 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 17A I(D) | SO |
| IRF7811 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 14A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF742R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-220AB |
| IRF743 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF7433 | 功能描述:MOSFET P-CH 12V 8.9A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF7433 | 制造商:International Rectifier 功能描述:MOSFET P SO-8 |
| IRF7433.PBF | 制造商:International Rectifier 功能描述:MOSFET P SO-8 制造商:International Rectifier 功能描述:MOSFET, P, SO-8 |
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