參數(shù)資料
型號(hào): IRF7410
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 2/9頁(yè)
文件大小: 102K
代理商: IRF7410
IRF7410
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
-1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
trr
Reverse Recovery Time
–––
97
145
ns
TJ = 25°C, IF = -2.5A
Qrr
Reverse Recovery Charge
–––
134
201
C
di/dt = -100A/s
Source-Drain Ratings and Characteristics
A
-65
–––
-2.5
–––
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400s; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Surface mounted on 1 in square Cu board, t ≤ 10sec.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12
–––
VVGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.006 –––
V/°C
Reference to 25°C, ID = -1mA
–––
7VGS = -4.5V, ID = -16A
–––
9VGS = -2.5V, ID = -13.6A
–––
13
VGS = -1.8V, ID = -11.5A
VGS(th)
Gate Threshold Voltage
-0.4
–––
-0.9
V
VDS = VGS, ID = -250A
gfs
Forward Transconductance
55
–––
SVDS = -10V, ID = -16A
–––
-1.0
VDS = -9.6V, VGS = 0V
–––
-25
VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
-100
VGS = -8V
Gate-to-Source Reverse Leakage
–––
100
VGS = 8V
Qg
Total Gate Charge
–––
91
–––
ID = -16A
Qgs
Gate-to-Source Charge
–––
18
–––
nC
VDS = -9.6V
Qgd
Gate-to-Drain ("Miller") Charge
–––
25
–––
VGS = -4.5V
td(on)
Turn-On Delay Time
–––
13
20
VDD = -6V, VGS = -4.5V
tr
Rise Time
–––
12
18
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
271
407
RD = 6
tf
Fall Time
–––
200
300
RG = 6
Ciss
Input Capacitance
––– 8676 –––
VGS = 0V
Coss
Output Capacitance
––– 2344 –––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
––– 1604 –––
= 1.0MHz
IGSS
A
m
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
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