參數(shù)資料
型號: IMC016FLSG
廠商: INTEL CORP
元件分類: DRAM
英文描述: 5 V Series 200 Flash Memory Card(5V系列200閃速存儲器插卡)
中文描述: 16M X 8 FLASH 5V PROM CARD, 200 ns, XMA68
封裝: PC CARD
文件頁數(shù): 30/35頁
文件大?。?/td> 217K
代理商: IMC016FLSG
iMC008/016/024/032/048/064FLSG
E
30
PRELIMINARY
8.5.2
WRITE OPERATIONS
(1, 2)
Symbol
8
– 64-MB
Cards
JEDEC
PCMCIA
Parameter
Min
Max
Unit
t
AVAV
t
c
W
Write Cycle Time
200
ns
t
WLWH
t
w
(WE)
WE# Pulse Width
120
ns
t
AVWL
t
su
(A)
Address Setup Time to WE# Active
20
ns
t
AVWH
t
su
(A-WEH)
Address Setup Time for WE#
140
ns
t
ELWH
t
su
(CEWEH)
Card Enable Setup Time for WE#
140
ns
t
DVWH
t
su
(D-WEH)
Data Setup Time for WE# Inactive
60
ns
t
WHDX
t
h
(D)
Data Hold Time from WE# Inactive
30
ns
t
WHAX
t
rec
(WE)
Write Recovery Time
30
ns
t
WHGL
t
h
(OE-WE)
Output Enable Hold from WE#
10
ns
t
WHRL
WE# (CE#) Inactive Time to RDY/BSY# Active
90
ns
NOTES:
1.
2.
These timings apply only if both CE#s (CE
1
# and CE
2
#) are deasserted prior to WE# asserted.
Read timing characteristics during erase and write operations are the same as during read-only operations. Refer to AC
Characteristicsfor read-only operations.
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