參數(shù)資料
型號(hào): IMC016FLSG
廠商: INTEL CORP
元件分類: DRAM
英文描述: 5 V Series 200 Flash Memory Card(5V系列200閃速存儲(chǔ)器插卡)
中文描述: 16M X 8 FLASH 5V PROM CARD, 200 ns, XMA68
封裝: PC CARD
文件頁數(shù): 17/35頁
文件大小: 217K
代理商: IMC016FLSG
E
iMC008/016/024/032/048/064FLSG
17
PRELIMINARY
Table 7. eXtended Status Register Definitions
WBS
Reserved
bit 7
bits 6
–0
High Z
When
Busy
Status Register Bits
NOTES:
No
Yes
XSR.7 = WRITE BUFFER STATUS
1 = Write buffer available
0 = Write buffer not available
XSR.6
–XSR.0
ENHANCEMENTS
=
RESERVED FOR FUTURE
After a Buffer-Write command, XSR.7 = 1
indicates that a Write Buffer is available.
SR.6–SR.0 are reserved for future use and
should be masked when polling the status
register.
5.1.5
BLOCK ERASE COMMAND
Erase is executed one block at a time and initiated
by a two-cycle command. A block erase setup is
first written, followed by an block erase confirm.
This command sequence requires an appropriate
address within the block to be erased (erase
changes
all
block
data
preconditioning, erase, and verify are handled
internally by the WSM (invisible to the system).
After the two-cycle block erase sequence is written,
the device automatically outputs status register
data when read. The CPU can detect block erase
completion by analyzing the logic level of the STS
pin or status register bit SR.7.
Toggle OE#, CE
1
# or
CE
2
# to update the status register.
to
FFH).
Block
When the block erase is complete, status register
bit SR.5 should be checked. If a block erase error is
detected, the status register should be cleared
before system software attempts corrective actions.
The CUI remains in read status register mode until
a new command is issued.
This two-step command sequence of set-up
followed by execution ensures that block contents
are not accidentally erased. An invalid Block Erase
command sequence will result in both status
register bits SR.4 and SR.5 being set to “1.”
Successful
block
erase
corresponding block lock-bit be cleared. If block
erase is attempted when the corresponding block
lock-bit is set, SR.1 and SR.5 will be set to “1.”
requires
that
the
5.1.6
BLOCK ERASE SUSPEND COMMAND
The Block Erase Suspend command allows block-
erase interruption to read or write data in another
block of memory. Once the block erase process
starts, writing the Block Erase Suspend command
requests that the WSM suspend the block erase
sequence at a predetermined point in the algorithm.
The device outputs status register data when read
after the Block Erase Suspend command is written.
Polling status register bit SR.7 then SR.6 can
determine when the block erase operation has been
suspended (both will be set to “1”). The BUSY#
output will also transition to V
OH
. Specification
t
WHRH
defines the block erase suspend latency.
At this point, a Read Array command can be written
in order to read data from blocks other than that
which is suspended. A word-write or write-to-buffer
command sequence can also be issued during
erase suspend to write data in other blocks. During
a write operation with block erase suspended,
status register bit SR.7 will return to “0” and the
BUSY# output will transition to V
OL
.
The only other valid commands while block erase is
suspended are Read Query, Read Status Register,
Clear Status Register, Configure, and Block Erase
Resume. After a Block Erase Resume command is
written to the flash memory, the WSM will continue
the block erase process. Status register bits SR.6
and SR.7 will automatically clear and the BUSY#
output will return to V
OL
. After the Erase Resume
command is written, the device automatically
outputs status register data when read. Block erase
cannot resume until write operations initiated during
block erase suspend have completed.
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