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參數(shù)資料
| 型號(hào)： | IDTTSE2002B3CNRG |
| 廠商： | IDT, Integrated Device Technology Inc |
| 文件頁數(shù)： | 14/30頁 |
| 文件大小： | 423K |
| 描述： | IC TEMP SENS EEPROM DFN-8 |
| 標(biāo)準(zhǔn)包裝： | 120 |
| 功能： | 溫度監(jiān)控系統(tǒng)（傳感器） |
| 傳感器類型： | 內(nèi)部 |
| 感應(yīng)溫度： | -20°C ~ 125°C |
| 精確度： | ±1°C（最小值） |
| 拓?fù)洌?/td> | ADC（三角積分型），控制邏輯，寄存器庫(kù) |
| 輸出類型： | 2 線串行，I²C?/SMBUS? |
| 輸出警報(bào)： | 無 |
| 輸出風(fēng)扇： | 無 |
| 電源電壓： | 3 V ~ 3.6 V |
| 工作溫度： | -20°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-VFDFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 8-VFQFPN（2x3） |
| 包裝： | 管件 |
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14 of 30
May 12, 2010
IDT Confidential
I
2
C Operating Modes
Device Reset and Initialization
In order to prevent inadvertent Write operations during Power-up, a Power-On Reset (POR) circuit is included.
At Power-up (phase during which V
DDSPD
is lower than V
DDSPDmin
but increases continuously), the device will not respond to any instruction until
V
DDSPD
has reached the Power On Reset threshold voltage (this threshold is lower than the minimum V
DDSPD
operating voltage defined in the DC
AND AC PARAMETERS tables). Once V
DDSPD
has passed the POR threshold, the device is reset. The actual POR threshold voltage will be imple-
mentation dependent and is not defined in this document.
The device is delivered with all bits in the EEPROM memory array set to ' 1' (each byte contains 0xFF).
Prior to selecting the memory and issuing instructions, a valid and stable V
DDSPD
voltage must be applied. This voltage must remain stable and
valid until the end of the transmission of the instruction and for a Write instruction, until the completion of the internal write cycle (t
W
).
At Power-down (phase during which V
DDSPD
decreases continuously), as soon as V
DDSPD
drops below the minimum operating voltage, the device
stops responding to commands, and remains in reset until the POR threshold voltage is reached.
Mode
R/W# Bit Bytes
Initial Sequence
SPD Current Address Read
1
1
START, Device Select, R/W# = 1
SPD Random Address Read
0
1
START, Device Select, R/W# = 0, Address
1
reSTART, Device Select, R/W# = 1
SPD Sequential Read
1
>
1
Similar to Current or Random Address Read
SPD Byte Write
0
1
START, Device Select, R/W# = 0, data, STOP
SPD Page Write
0
<
16 START, Device Select, R/W# = 0, data, STOP
TS Write
0
2
START, Device Select, R/W#=0, pointer, data, STOP
TS Read
1
2
START, Device Select, R/W#=1, pointer, data, STOP
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDTTSE2002B3CNRG8 | 功能描述:IC TEMP SENS EEPROM DFN-8 RoHS:是 類別:集成電路 (IC) >> PMIC - 熱管理 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 功能:溫度開關(guān) 傳感器類型:內(nèi)部 感應(yīng)溫度:85°C 分界點(diǎn) 精確度:±6°C（最小值） 拓?fù)?ADC（三角積分型），比較器，寄存器庫(kù) 輸出類型:開路漏極 輸出警報(bào):是 輸出風(fēng)扇:是 電源電壓:2.7 V ~ 5.5 V 工作溫度:-55°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:SC-74A，SOT-753 供應(yīng)商設(shè)備封裝:SOT-23-5 包裝:帶卷 (TR) 其它名稱:ADT6501SRJZP085RL7-ND |
| IDTTSE2002GB2A1NCG | 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8 |
| IDTTSE2002GB2A1NCG8 | 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8 |
| IDTTSE2002GB2A1NRG | 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8 |
| IDTTSE2002GB2A1NRG8 | 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8 |
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