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參數(shù)資料
| 型號： | IBM13T16644NPA |
| 廠商： | IBM Microeletronics |
| 英文描述： | 16M x 64 PC100 SDRAM(1MB PC100 同步動態(tài)RAM) |
| 中文描述： | 16米x 64 PC100的SDRAM內存（1MB的PC100的同步動態(tài)內存） |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 407K |
| 代理商： | IBM13T16644NPA |
IBM13T16644NPA
16M x 64 PC100 SDRAM SO DIMM
09K1470.E92279
11/99
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 7 of 17
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
CC
Power Supply Voltage
-0.3 to +4.6
V
1
V
IN
Input Voltage
SDRAM Devices
-0.3 to +V
CC
+0.3
Serial PD Device
-0.3 to +6.5
V
OUT
Output Voltage
SDRAM Devices
-0.3to +V
CC
+0.3
Serial PD Device
-0.3 to +6.5
T
OPR
Operating Temperature
0 to +70
°
C
1
T
STG
Storage Temperature
-55 to +125
°
C
1
P
D
Power Dissipation
1.73
W
1, 2
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
2. Power is calculated using I
DD1
@ 3.6Volt.
Recommended DC Operating Conditions
(T
A
= 0 to 70
°
C)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
V
CC
Supply Voltage
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
—
V
CC
+ 0.3
V
1
V
IL
Input Low Voltage
-0.3
—
0.8
V
1
1. All voltages referenced to V
SS
.
Capacitance
(T
A
= 25
°
C, f=1MHz, V
CC
= 3.3V
±
0.3V)
Symbol
Parameter
Max. Capacitance
Units
C
I1
Input Capacitance (A0 - A9, A10/AP, A11, BS0, BS1, RAS, CAS, WE)
58
pF
C
I2
Input Capacitance (CKE0, CKE1)
28
pF
C
I3
Input Capacitance (S0, S1)
28
pF
C
I4
Input Capacitance (CK0, CK1)
32
pF
C
I5
Input Capacitance (DQMB0 - DQMB7)
14
pF
C
I6
Input Capacitance (SCL)
13
pF
C
IO1
Input/Output Capacitance (DQ0 - DQ63)
17
pF
C
IO2
Input/Output Capacitance (SDA)
15
pF
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