參數(shù)資料
型號(hào): IBM13T16644NPA
廠商: IBM Microeletronics
英文描述: 16M x 64 PC100 SDRAM(1MB PC100 同步動(dòng)態(tài)RAM)
中文描述: 16米x 64 PC100的SDRAM內(nèi)存(1MB的PC100的同步動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 10/17頁(yè)
文件大?。?/td> 407K
代理商: IBM13T16644NPA
IBM13T16644NPA
16M x 64 PC100 SDRAM SO DIMM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 17
09K1470.E92279
11/99
AC Characteristics
(T
A
= 0 to +70
°
C, V
CC
= 3.3V
±
0.3V)
An initial pause of 200
μ
s, with DQMB0-7 and CKE0-CKE1 held high, is required after power-up. A Precharge All Banks command must
be given followed by a minimum of eight Auto (CBR) Refresh cycles before or after the Mode Register Set operation.
1. The Transition time is measured between V
IH
and V
IL
(or between V
IL
and V
IH
).
2. In addition to meeting the transition rate specification, the clock and CKE must transit between V
IH
and V
IL
(or between V
IL
and V
IH
)
in a monotonic manner.
3. Load Circuit: AC timing tests have V
IL
= 0.8 V and V
IH
= 2.0 V with the timing referenced to the 1.40V crossover point
4. Load Circuit: AC measurements assume t
T
=1.2ns.
AC Characteristics Diagram
Output
Input
Clock
t
OH
t
SETUP
t
HOLD
t
AC
t
LZ
1.4V
1.4V
V
IL
1.4V
t
T
t
CKH
t
CKL
Output
50pF
Z
o
= 50
AC Output Load Circuit
V
IH
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